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Single crystal thin film of organic semiconductor compound and method for producing the same

一种有机半导体、单晶薄膜的技术，应用在半导体器件、化学仪器和方法、半导体/固态器件制造等方向，能够解决出现缺陷、不可能稳定地制备大面积和均匀的单晶薄膜等问题

Inactive Publication Date: 2010-08-04
FUJIFILM CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the wiggling phenomenon occurs, when forming a crystal of an organic semiconductor, defects are prone to occur, and the crystal growth direction tends to be irregular, which makes it impossible to stably prepare a large-area and uniform single-crystal thin film (see, for example, Langmuir, 2007, vol.23, p.6864, etc.)

Method used

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  • Single crystal thin film of organic semiconductor compound and method for producing the same
  • Single crystal thin film of organic semiconductor compound and method for producing the same
  • Single crystal thin film of organic semiconductor compound and method for producing the same

Examples

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Effect test

preparation example Construction

[0080] figure 1 is a schematic diagram illustrating an example of a thin film production apparatus. Such as figure 1 Shown, the preparation device 1 of thin film is made up of following: be used for the base 4 of fixed substrate 2, be used for heating the heater 7 of the sublimation crucible 5 that places organic semiconductor compound (organic semiconductor material) 6, and make the preparation device of thin film The internal pressure of 1 reaches the exhaust port 8 of the vacuum state. In order to control the temperature of the substrate 2, a Peltier device 3 is preferably fixed on a susceptor 4, as shown.

[0081] First, the substrate 2 prepared by forming an organic solvent liquid film (oil film) 9 by applying a specific organic solvent on the substrate 2 is set on the susceptor 4 in the thin film manufacturing apparatus 1 . On the other hand, the organic semiconductor compound 6 is placed in the sublimation crucible 5, and the sublimation crucible 5 is placed at a pre...

Embodiment 1

[0095] ITO (which is transparent electrode) glass substrate (10 mm square, produced by EHC), and an organic solvent liquid film having a thickness of 10 μm was prepared. Place the glass substrate on which the organic solvent liquid film is formed in the chamber of the vacuum vapor deposition device.

[0096] Then, rubrene (manufactured by Sigma Aldrich Japan) was placed in a sublimation crucible, followed by vacuum vapor deposition for 2 hours. In this vapor deposition, the conditions are: vacuum degree 1×10 -3 Pa, the heating temperature of the heater is 180° C., and the vapor deposition rate is 5 nm / min. During this treatment, the temperature of the glass substrate was 25°C.

[0097] The obtained glass substrate with the organic solvent liquid film was taken out from the chamber and observed with a microscope to confirm that a rubrene single crystal thin film was formed on the glass substrate. The obtained single crystal was approximately circular, with an average diamet...

Embodiment 2

[0099] A rubrene single crystal thin film was prepared in the same manner as in Example 1, except that the temperature of the glass substrate with ITO was changed to -10°C.

[0100] Microscopic observation of the obtained single crystal thin film confirmed that the obtained single crystal was approximately circular, had an average diameter of 50 μm, a thickness of 5 μm, and an aspect ratio of 10. From this result, it can be clearly seen that the single crystal thin film is prepared at a lower temperature, and the single crystal thin film with a larger aspect ratio can be formed.

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Abstract

Disclosed is a method for producing a single crystal thin film of an organic semiconductor compound, which comprises a step for forming a liquid film (9) on a substrate (2) by coating the substrate (2) with an organic solvent having a dielectric constant of not less than 4.5 in which solvent an organic semiconductor compound can be dissolved, a step for supplying and dissolving the organic semiconductor compound into the liquid film (9), and a step for crystallizing the organic semiconductor compound in the organic solvent.

Description

technical field [0001] The present invention relates to a method for preparing single crystal thin films of organic semiconducting compounds. More specifically, the present invention relates to a method for producing a large-area and uniform single-crystal thin film of an organic semiconductor compound, and to a single-crystal thin film of an organic semiconductor compound prepared by the method. Background technique [0002] Thin films of organic semiconducting compounds are applied to functional materials such as electro-optical devices, semiconductor devices, light-emitting devices, and laser media. Especially in recent years, new functional materials expected to have the diversity of organic semiconductor compounds are being studied. In order to advantageously use the organic semiconductor compound as a functional material, it is preferable to form the organic semiconductor compound in a thin film state on a substrate provided with electrodes and the like. [0003] On ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/368C30B29/54H01L21/336H01L21/363H01L29/786H01L51/05H01L51/40H10K99/00
CPCH01L51/0541H01L51/0007H01L51/0545C30B29/54H01L51/0558H01L51/001H01L51/0054H01L51/0055C30B7/06C30B7/00H01L51/0012H10K71/15H10K71/164H10K71/191H10K85/622H10K85/623H10K10/466H10K10/464H10K10/484H10K71/12
Inventor 加藤隆志五十岚达也岛田敏宏石井由威
Owner FUJIFILM CORP
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