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Method for refining trichlorosilane

A technology of trichlorosilane and refining method, applied in the direction of silicon, halogenated silanes, halogenated silicon compounds, etc., can solve the problems of changes in the purity of silicon tetrachloride, unstable quality, etc., and achieves half of the possibility and long-term cost reduction. half, large effect

Inactive Publication Date: 2010-07-21
HUALU ENG & TECH
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Problems solved by technology

But in actual operation, the purity of the silicon tetrachloride extracted by the side line is changing, and the quality is not stable

Method used

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  • Method for refining trichlorosilane
  • Method for refining trichlorosilane
  • Method for refining trichlorosilane

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Embodiment Construction

[0024] Such as figure 1 As shown, in this implementation, when polysilicon is manufactured according to the vapor phase deposition method, the gas discharged from the reduction furnace is a mixture of trichlorosilane, dichlorosilane and silicon tetrachloride, which is discharged from several reduction furnaces used The chlorosilane liquid obtained after cooling the gas is supplied to the middle stage of the fractionator 10 as a feed liquid. The objects recovered in the chlorosilane liquid are dichlorosilane, trichlorosilane, silicon tetrachloride, and polychlorosilane called polymer, which has a higher boiling point than silicon tetrachloride. The feed liquid supplied to the column is heated in the reboiler 12 at the bottom of the column. Dichlorosilane and trichlorosilane with low boiling point become vapors and are discharged from the top of the tower, and are liquefied in the condenser 11 to form a mixed solution of high-purity dichlorosilane and trichlorosilane. A part o...

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Abstract

The invention provides a method for refining trichlorosilane. When polysilicon is prepared according to a vapor deposition method, solution of dichloro-silane, trichlorosilane and silicon tetrachloride which are obtained in the gas discharged from a reduction furnace is processed through a rectifying tower. The method is characterized in that the dichloro-silane is extracted on the tower top and simultaneously the trichlorosilane and the silicon tetrachloride are extracted by lateral lines; the tower top temperature and any one middle section temperature T of the rectifying tower are measured; for keeping the measured middle section temperature T in a certain range, the quantity of reflux R of the tower top is controlled; when the middle section temperature T rises, the quantity of reflux R is increased; and when the middle section temperature T decreases, the quantity of reflux R is reduced. With the component change of the chlorosilane solution, the method prevents the reduction of the purities of the trichlorosilane and the silicon tetrachloride.

Description

technical field [0001] The invention relates to a method for recovering high-purity trichlorosilane. Background technique [0002] Monocrystalline silicon is the material used to manufacture semiconductors, and monocrystalline silicon is made of high-purity polycrystalline silicon. High-purity polysilicon is produced by a vapor-phase deposition method called Siemens. In the manufacture of polysilicon by the Siemens method, the mixed raw material gas of trichlorosilane and hydrogen is usually sent to the reduction furnace. Then, in the reduction furnace, on the surface of the silicon rod heated by electricity, the polysilicon is deposited by the vapor phase deposition method. [0003] In the Siemens method, the reaction rate of the raw material trichlorosilane is as low as 10%, and most of the trichlorosilane is unreacted in the reduction furnace and discharged as a gas. At the same time, a part of the trichlorosilane reacted in the reduction furnace It turns into silicon ...

Claims

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Application Information

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IPC IPC(8): C01B33/107C01B33/03
Inventor 李汉陈维平李细巧薛民权王波刘欣
Owner HUALU ENG & TECH
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