Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method and device for solar-grade polycrystalline silicon

A solar-grade, preparation device technology, applied in the field of solar cells, can solve problems such as increased loss of polysilicon and zinc, difficulty in controlling the quality of reactants, and equipment corrosion, achieving high production efficiency, easy control of reactant ratios, and low production costs Effect

Inactive Publication Date: 2010-06-30
SHENYANG JINBO NEW TECH IND +1
View PDF2 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The purity of the zinc chloride obtained in patent CN101311346 is 99.9% or higher, and the metal zinc and silicon in the waste gas of the reactants are chlorinated by chlorine gas, which will inevitably increase the loss of polysilicon and zinc
These methods are all gas-gas reactions, and there are problems such as difficult control of the mass ratio of reactants, high energy consumption, complicated process, and serious corrosion of equipment.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method and device for solar-grade polycrystalline silicon
  • Preparation method and device for solar-grade polycrystalline silicon
  • Preparation method and device for solar-grade polycrystalline silicon

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] The silicon tetrachloride waste is distilled and purified to 7N grade, and the metal zinc obtained by electrolysis is distilled and purified to 7N grade. The temperature of the reducing agent storage chamber and the reaction chamber is controlled at 780°C. The heated and melted liquid zinc is added to the reducing agent storage tank of the reducing agent storage room through the reducing agent liquid inlet, and the liquid zinc enters the reaction nozzle under the action of gravity, and the 7N grade silicon tetrachloride gas is formed by SiCl 4 The inlet pipe is sprayed into the reaction nozzle, and liquid zinc and 7N grade silicon tetrachloride gas undergo a gas-liquid reduction reaction at a temperature of 780 ° C, as follows:

[0043] SiCl 4 (g)+2Zn(l)→Si(s)+2ZnCl 2 (g)

[0044] To prevent the reducing agent from encountering SiCl 4 Cold air absorbs heat and solidifies, SiCl 4 in SiCl 4 The preparation system was heated to a reaction temperature of 780°C.

[00...

Embodiment 2

[0052] Metallurgical grade silicon tetrachloride is distilled and purified to 7N grade, and metal zinc obtained by electrolysis is distilled and purified to 7N grade. The temperature of the reducing agent storage chamber and the reaction chamber is controlled at 900°C. The heated and melted liquid zinc is added to the reducing agent storage tank of the reducing agent storage room through the reducing agent liquid inlet, and the liquid zinc enters the reaction nozzle under the action of gravity, and the 7N grade silicon tetrachloride gas is formed by SiCl 4 The inlet pipe is sprayed into the reaction nozzle, and liquid zinc and 7N grade silicon tetrachloride gas undergo a gas-liquid reduction reaction at a temperature of 900 ° C, as follows:

[0053] SiCl 4 (g)+2Zn(l)→Si(s)+2ZnCl 2 (g)

[0054] To prevent the reducing agent from encountering SiCl 4 Cold air absorbs heat and solidifies, SiCl 4 in SiCl 4 The preparation system was heated to a reaction temperature of 900°C. ...

Embodiment 3

[0062] The silicon tetrachloride waste is distilled and purified to 7N grade, and the metal zinc obtained by electrolysis is distilled and purified to 7N grade. The temperature of the reducing agent storage chamber and the reaction chamber is controlled at 650°C. The heated and melted liquid zinc is added to the reducing agent storage tank of the reducing agent storage room through the reducing agent liquid inlet, and the liquid zinc enters the reaction nozzle under the action of gravity, and the 7N grade silicon tetrachloride gas is formed by SiCl 4 The inlet pipe is sprayed into the reaction nozzle, and liquid zinc and 7N grade silicon tetrachloride gas undergo a gas-liquid reduction reaction at a temperature of 650°C, as follows:

[0063] SiCl 4 (g)+2Zn(l)→Si(s)+2ZnCl 2 (g)

[0064] To prevent the reducing agent from encountering SiCl 4 Cold air absorbs heat and solidifies, SiCl 4 in SiCl 4 The preparation system was heated to a reaction temperature of 650°C.

[0065...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
boiling pointaaaaaaaaaa
melting pointaaaaaaaaaa
boiling pointaaaaaaaaaa
Login to View More

Abstract

The invention relates to a preparation method and a device for solar-grade polycrystalline silicon. The preparation device is formed by a reactor and a catcher. The reactor is formed by a reducing agent storage chamber and a reaction chamber. The catcher is formed by a first-stage catcher and a second-stage catcher. Liquid zinc reacts with 7N-grade silicon tetrachloride gas under 650-900 DEG C. The product is brought to the catcher. The collected polycrystalline silicon is distilled in vacuum and is directionally solidified to obtain 6N-grage solar polycrystalline silicon. SiCl4 in waste gas is returned and recycled. After ZnCl2 is distilled and purified, the ZnCl2 is electrolyzed to obtain Zn and chlorine which are returned and recycled. The main raw material of the method is 7N-grade silicon tetrachloride obtained from waste silicon tetrachloride or metallurgical-grade silicon tetrachloride in Siemens process through distillation and purification, the production cost is low and the pollution problem caused by the Siemens process is solved.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to the preparation technology of solar grade polysilicon. Background technique [0002] Polysilicon is the basic material for manufacturing solar cells. There was no special solar-grade polysilicon production line in the past. The silicon used for solar cells is made of waste materials, defective materials and crucible residues produced in the semiconductor industry. The purity of these waste materials is above 7N, which can meet the requirements of Make solar cells. But the quantity is very small, which can only meet the needs of a small number of electronic products. Since the beginning of the 21st century, with the rapid rise of the photovoltaic industry, the demand for solar-grade polysilicon has grown exponentially. The solar cell market is in desperate need of process technologies capable of mass producing solar-grade silicon. [0003] At present, most domes...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/033C30B29/06
Inventor 张廷安李景江李瑞冰豆志河吕国志
Owner SHENYANG JINBO NEW TECH IND
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com