Method for on-line monitoring of photoetching conditions

A technology for monitoring light and conditions, used in microlithography exposure equipment, photolithography process exposure devices, etc., can solve the problems of high graphic shape, inability to monitor online, and inability to monitor, and achieve the effect of improving accuracy

Active Publication Date: 2010-06-09
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology

[0003] At the same time, for some photoresist layers, due to the limitations of various processes or design requirements, there are usually design rules for the minimum area, which cannot be monitored online in the existing process
[0004] Finally, after using Optical Proximity Correction (OPC, Optical Proximity Correction) for some two-dimensional graphics, or some processes have high requirements on the shape of graphics, existing methods cannot monitor

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  • Method for on-line monitoring of photoetching conditions
  • Method for on-line monitoring of photoetching conditions
  • Method for on-line monitoring of photoetching conditions

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Embodiment Construction

[0014] Such as Figure 5 Shown is the flow chart of the present invention, and the method for on-line monitoring lithography condition of the present invention mainly is to monitor two-dimensional figure, mainly comprises two steps: measure the area of ​​monitored figure; And compare the area of ​​monitored figure and standard figure Whether the area deviation exceeds the set deviation range, if it exceeds, it is judged that the photolithography condition is unqualified, otherwise it is qualified.

[0015] Usually the area deviation range is set with reference to the standard pattern, and it is also related to the requirements of the photolithography process conditions. For example, the allowable deviation range can be set to 10% of the standard pattern. If the process requirements are strict, then The allowable range value of the deviation can be reduced, and vice versa can be enlarged.

[0016] The present invention can adopt the existing method for measuring the minimum fe...

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Abstract

The invention discloses a method for on-line monitoring of photoetching conditions, which comprises the following steps: (1) measuring the area of a graph to be monitored, and processing an image acquired by equipment detection; (2) measuring the area ratio of the effective graph region in the graph to be monitored in the acquired image to the total graph region; and (3) comparing whether the area ratio of the effective graph region in the graph to be monitored to the total graph region is greater than the set area ratio range value or not, wherein if the area ratio is greater than the set area ratio range value, judging that the photoetching conditions are qualified, and if the area ratio is not greater than the set area ratio range value, judging that the photoetching conditions are notqualified. By measuring the area ratio of the effective graph region to the marginal graph region, the invention can monitor the shape of the graph to be measured.

Description

technical field [0001] The invention relates to a method for automatic control and lithography process evaluation in the field of semiconductor manufacturing, in particular to a method for on-line monitoring lithography conditions. Background technique [0002] In the existing semiconductor production, the monitoring of lithography conditions is mainly realized by measuring the critical dimension of a certain direction of the monitored pattern. For circular vias and some two-dimensional graphics (such as capacitor vias and rear channel The isolated island-shaped metal of the connection via hole of the wiring metal layer) is monitored by measuring multiple critical dimensions along a certain direction and then mathematically averaging the critical dimensions. This method is not sensitive enough to changes in lithography conditions, and it is not well represented for pattern changes. Such as figure 1 and figure 2 Shown is the monitored pattern formed by the same two-dimens...

Claims

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Application Information

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IPC IPC(8): G03F7/20
Inventor 王雷
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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