Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Device of chemical vapor deposition diamond or other substances

A chemical vapor deposition and diamond technology, which is applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of high cost and large gas consumption, so as to save consumption, benefit environmental protection and reduce emissions Effect

Active Publication Date: 2010-05-19
河北平钻人造金刚石有限公司
View PDF2 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a device for chemical vapor deposition of diamond or other substances, the main purpose of which is to solve the problems of excessive gas consumption and high cost in the chemical vapor deposition process using the direct current arc spray method. The quality of the product, and the gas consumption is low, the cost is low, the emission is reduced, it is conducive to environmental protection, and the economic benefit is good

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Device of chemical vapor deposition diamond or other substances
  • Device of chemical vapor deposition diamond or other substances

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0012] see figure 1 , the chemical vapor deposition diamond device comprises a DC arc jet plasma torch 1, a vacuum chamber 2, and a substrate 3, and a gas recycling mechanism is arranged between the vacuum chamber 2 and the DC arc jet plasma torch 1; the vacuum chamber 2 is a closed type structure, and is provided with an outlet connected to the gas recycling mechanism, the gas recycling mechanism is provided with a booster pump 6, and the outlet pipe of the booster pump 6 is connected with the exhaust pipe and the inlet pipe of the DC arc jet plasma torch 1; the gas return The mechanism is provided with a vacuum chamber pressure regulating valve 5, and the exhaust pipe of the booster pump 6 is provided with a booster pump outlet pressure regulating valve 8 and an exhaust pump 9; the vacuum chamber 2 is provided with a vacuum chamber pressure measuring vacuum gauge 4, increasing The outlet pipe of the pressure pump 6 is provided with a vacuum gauge 7 at the outlet of the boost...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a device of chemical vapor deposition diamond, relating to the technical field of functional material preparation. The device comprises a direct current arc jet plasma torch, a vacuum chamber and a substrate, wherein a gas recycling mechanism is arranged between the vacuum chamber and the plasma torch. Compared with the prior art, the invention better solves the problem of long-standing large gas consumption in the chemical vapor deposition diamond with the direct current arc jet method in the prior art, has simple structure and reasonable technology, can ensure product quality, greatly saves working medium gas usage amount, greatly lowers cost, reduces emission, is favourable for environment protection and has favourable economic benefit and social benefit.

Description

technical field [0001] The invention belongs to the technical field of functional material preparation. Background technique [0002] The method of chemical vapor deposition of diamond is generally as follows: after passing hydrogen, carbon-containing gas (such as methane) through a high-temperature activation source, it is dissociated into hydrogen atoms, carbon atoms and various hydrocarbon groups. When the gas flow encounters a cooler substrate, under the action of hydrogen atoms, carbon atoms are deposited into diamonds. At present, according to the different activation sources, there are three main methods for preparing diamond by chemical vapor deposition: microwave method, hot wire method and DC arc spray method. The DC arc jet method is known for its fast growth rate and good product quality, but has also been criticized for its very high gas consumption. Contents of the invention [0003] The purpose of the present invention is to provide a device for chemical v...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/27
Inventor 郭辉姜龙张永贵何奇宇王志娜
Owner 河北平钻人造金刚石有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com