Ultrahigh recovery stress Ti-Ni-Cu shape memory alloy thin film and preparation method thereof
A technology of ti-ni-cu and memory alloy, which is applied in the field of ultra-high recovery stress Ti-Ni-Cu shape memory alloy film and its preparation, can solve the problems that cannot meet the ultra-high output power per unit volume of micro-drive components, and achieve Meet the effects of small size, reduced phase transition temperature hysteresis, and ultra-high recovery stress
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specific Embodiment approach 1
[0011] Embodiment 1: The ultra-high recovery stress Ti-Ni-Cu shape memory alloy thin film of this embodiment is composed of 50.5%-66.6% Ti, 15%-40% Cu and the balance Ni.
[0012] The Ti-Ni-Cu shape memory alloy thin film of the present invention reduces the phase transition temperature hysteresis, the grain size is 50-500nm, the thickness is 3-10μm, has ultra-high recovery stress (higher than 1GPa), and fast response speed The advantages of the micro-drive element can meet the requirements of small size and ultra-high driving force.
specific Embodiment approach 2
[0013] Specific embodiment two: the preparation method of Ti-Ni-Cu shape memory alloy thin film in this embodiment is characterized in that the preparation method of Ti-Ni-Cu shape memory alloy thin film is carried out according to the following steps: with glass as substrate , put the glass into the vacuum chamber of the magnetron sputtering apparatus after cleaning, and evacuate until the vacuum degree in the vacuum chamber is 3×10 -5 Pa; then argon gas is introduced to make the partial pressure of argon gas reach 0.01-0.3Pa, nickel, titanium and copper are used as cathodes to deposit by magnetron co-sputtering method for 1-3h, and during the deposition process, the sputtering of target cathode nickel The power is 150-300W, the sputtering power of target cathode titanium is 1000W, the sputtering power of target cathode copper is 20-50W, and the substrate temperature is 200℃; ~700℃, vacuum degree is 2.7×10 -5 Vacuum heat treatment is carried out under Pa condition for 1min t...
specific Embodiment approach 3
[0022] Embodiment 3: This embodiment differs from Embodiment 2 in that: the magnetron sputtering apparatus is an ultra-high vacuum multi-target magnetron sputtering apparatus. Other steps and parameters are the same as in the second embodiment.
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