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Chemical mechanical polishing sizing agent

A chemical mechanical and polishing slurry technology, which is applied in the manufacture of polishing compositions containing abrasives, electrical components, and semiconductor/solid-state devices, and can solve problems such as high pinhole corrosion, high dielectric erosion, and low product yield. , to achieve the effect of reducing corrosion, reducing dielectric erosion, and reducing defects

Inactive Publication Date: 2014-02-26
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Their polishing objects have high pinhole corrosion, high dielectric erosion, and low product yield

Method used

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  • Chemical mechanical polishing sizing agent
  • Chemical mechanical polishing sizing agent
  • Chemical mechanical polishing sizing agent

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～18

[0016] Table 1 is the chemical mechanical polishing slurry formulation of Examples 1-18. Components and their contents listed in Table 1 are added to the reactor and stirred evenly, adding deionized water to dilute to make up the polishing slurry to a percentage by weight of 100%, and finally using a pH regulator (20% KOH or dilute HNO 3 , select according to the needs of the pH value) adjust to the required pH value, continue to stir until a uniform fluid, and stand still for 30 minutes to obtain the chemical mechanical polishing slurry.

[0017] Table 1. Components and contents of chemical mechanical polishing slurry in embodiments 1 to 18

[0018]

[0019]

[0020] The beneficial effects of the present invention will be further illustrated below through effect examples.

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Abstract

The invention discloses a chemical mechanical polishing sizing agent comprising oxidant containing two groups of oxidants, wherein one group is selected from one or a plurality of permanganate and soluble salt thereof, and the other group is selected from one or a plurality of nitric acid and soluble salt thereof. The chemical mechanical polishing sizing agent of the invention increases the absolute removal speed of metal by mutual action of oxidant permanganic acid radical and bitrate radical as well as abrasive particles, improves selection ratio of relative removal speed of dielectric, canlower metal pinhole corrosion, lowers dielectric corrosion produced in the metal planarization process, obviously lowers defects and improves product yield.

Description

technical field [0001] The invention relates to a polishing slurry, in particular to a chemical mechanical polishing slurry. Background technique [0002] In the integrated circuit (IC) manufacturing process, planarization technology has become one of the indispensable key technologies that are equally important and interdependent with photolithography and etching. The chemical mechanical polishing (CMP) process is currently the most effective and mature planarization technology. The chemical mechanical polishing system is a chemical mechanical planarization technology integrating cleaning, drying, online detection, end point detection and other technologies. An essential technology for improving production efficiency, reducing costs, and global flattening of wafers. CMP is widely used in the field of IC manufacturing, and the polishing objects include substrates, dielectrics and interconnect materials. Among them, metal CMP is one of the key processes in the manufacture ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/304C09G1/02
Inventor 徐春
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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