Film deposition method

Abstract

The invention discloses a film deposition method which comprises the following steps: placing a first electrode plate used as an anode and a second electrode plate used as a cathode in parallel in a reaction chamber, wherein the surface of the second electrode plate facing to the first electrode plate is provided with a sacrificial layer; putting a substrate on the surface of the first electrode plate facing to the sacrificial layer; leading etching gas into the reaction chamber; grounding the first electrode plate, and applying DC negative voltage to the second electrode plate; ionizing the etching gas into a plasma so as to etch the sacrificial layer, and depositing a film on the surface of the substrate. The film deposition method can improve the performance, particularly the stabilityof the film and the uniformity of large-area film deposition.

Description

technical field [0001] The invention relates to the technical field of photovoltaic solar cells, in particular to a method for depositing thin films. Background technique [0002] In recent years, due to the increasing shortage of energy, the development and utilization of renewable green energy has attracted more and more attention. Among them, the utilization of solar energy is particularly favored by the world. The development of photovoltaic (photovoltaic) solar cells and large-area photovoltaic modules as solar energy conversion media has attracted extensive attention. Among many solar cell products, hydrogenated amorphous silicon and nanocrystalline silicon thin-film solar cells represent the pioneer of photovoltaic technology due to their advantages of low cost, low energy consumption, large-area deposition on glass or flexible substrates that are thin and easy to lay and install. The development trend, with the widespread application of photovoltaic devices in comm...

AI Technical Summary

Problems solved by technology

[0005] Although the PECVD process has the characteristics of simple process and high deposition efficiency, it can be used in large areas (such as areas larger than 0.7m 2 ) When depositing silicon hydrogenated films at high rates, the uniformity will drop significantly

Moreover, the electronic defect density and uniformity in the plasma deposited film are difficult to be well controlled, such as the film of amorphous silicon and nanocrystalline silicon deposited at a low temperature (less than 230 ° C) using a source gas mixture of silane and hydrogen, The structure of the silicon-based film will contain a large number of polyhydrogen-silicon bonds, which will affect the stability of the film based on hydrogenated amorphous silicon under light, and greatly limit the ultimate conversion efficiency of solar cells based on amorphous silicon.

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