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Photonic crystal vertical cavity surface emitting laser with single module, large power and low divergence angle

A technology of vertical cavity surface emission and photonic crystals, which is applied in the direction of semiconductor lasers, lasers, laser components, etc., can solve the problems of divergence angles that have not been reported, and achieve the effects of flexible device structure design, increased bandwidth, and extended life.

Active Publication Date: 2009-11-25
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But document 5: "A.J.Danner, T.S.Kim, K.D.Choquette, ELECTRONICS LETTERS, 2005 (41)" reported that the maximum output power of the single-mode photonic crystal vertical cavity surface emitting laser is only 3.1mW, and its divergence angle has not been reported

Method used

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  • Photonic crystal vertical cavity surface emitting laser with single module, large power and low divergence angle
  • Photonic crystal vertical cavity surface emitting laser with single module, large power and low divergence angle
  • Photonic crystal vertical cavity surface emitting laser with single module, large power and low divergence angle

Examples

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Embodiment 1

[0041]In this example, the working wavelength of the photonic crystal vertical cavity surface emitting laser with single mode, high power and low divergence angle is 0.85 μm. The schematic diagram of the surface topography of the upper DBR of the photonic crystal vertical cavity surface emitting laser of this example is as follows figure 2 shown.

[0042] In this example, the lower electrode is AuGeNiAu alloy, the upper electrode is TiAu alloy, the lower DBR is 34.5 pairs of n-type GaAs / AlGaAs, the active region is 3 pairs of GaAs quantum wells, the oxidation aperture is 34 μm, and the upper DBR is 20.5 pairs of p-type GaAs / AlGaAs; the surface of the upper DBR is engraved with a photonic crystal pattern of a single defect cavity, the period of the photonic crystal is 4 μm, the duty ratio is 0.5, and the etching depth is 10 pairs of DBR; the defect area is surrounded by a photonic crystal composed of three circles of air columns High loss region; the inner diameter of the ri...

Embodiment 2

[0045] In this example, the working wavelength of the photonic crystal vertical cavity surface emitting laser with single mode, high power and low divergence angle is 1.3 μm. Such as Figure 4 as shown, Figure 4 A top view of the surface topography of the upper DBR of the photonic crystal vertical cavity surface emitting laser provided according to the second embodiment of the present invention.

[0046] In this example, the lower electrode is AuGeNiAu alloy, the upper electrode is TiAu alloy, the lower DBR is 33.5 pairs of n-type GaAs / AlGaAs, the active region is 3 pairs of GaAs quantum wells, the oxidation aperture is 32 μm, and the upper DBR is 23 pairs of p-type GaAs / AlGaAs; the surface of the upper DBR is engraved with a photonic crystal pattern of a single defect cavity, the period of the photonic crystal is 5 μm, the duty ratio is 0.5, and the etching depth is 18 pairs of DBR; the defect area is surrounded by a photonic crystal composed of two circles of air columns ...

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Abstract

The invention relates to the technical field of semiconductor optoelectronic devices, and discloses a photonic crystal vertical cavity surface emitting laser with a single module, large power and a low divergence angle; the photonic crystal vertical cavity surface emitting laser consists of a lower electrode, a n-type underlayer, a lower DBR, an active layer, an oxidation layer, a defect cavity structure of which the surface is etched with a photonic crystal pattern, an upper DBR of an annular light emitting region, a p-type cover layer and an upper annular electrode from bottom to top, wherein a photonic crystal region of the surface of the upper DBR of the photonic crystal vertical cavity surface emitting laser has a high loss region and a coupling region; an annular region and a defect region are light outputting regions; and the electrode of the photonic crystal vertical cavity surface emitting laser is formed on the surface of the p-type cover layer of the upper DBR and the lower surface of the n-type underlayer through vapor deposition. The photonic crystal vertical cavity surface emitting laser is utilized to improve the outputting power of the single module and inhibit the divergence angle.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic devices, in particular to a photonic crystal vertical cavity surface-emitting laser with single-mode high-power and low divergence angle. Background technique [0002] As a member of the laser family, the vertical cavity surface emitting laser (VCSEL) has incomparable advantages over edge emitting semiconductor lasers, such as the beam exiting vertically to the substrate is easy to integrate on a single chip, and the circular symmetrical divergence of the outgoing beam is small, which is conducive to efficient coupling and resonance. The small size of the cavity can achieve extremely low threshold lasing, and the extremely short optical cavity can easily realize single longitudinal mode operation, which can be used for on-chip testing, simplifying the process and reducing costs, etc. Fields such as printing and biosensing are widely used and attract great interest and attentio...

Claims

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Application Information

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IPC IPC(8): H01S5/183
Inventor 郑婉华刘安金王科渠宏伟邢名欣陈微周文君
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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