Transient voltage suppresser diode and manufacturing method thereof

A technology of transient voltage suppression and manufacturing method, applied in the field of diodes, can solve the problem of high capacitance value of TVS diodes, and achieve the effects of large-scale production, simple process flow, and improved controllability

Active Publication Date: 2009-10-14
WILL SEMICON (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a TVS diode and its manufacturing method in order to overcome the defect that the capacitance value of the TVS diode is too high in the prior art, and the TVS diode and its manufacturing method have an ultra-low capacitance value

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  • Transient voltage suppresser diode and manufacturing method thereof
  • Transient voltage suppresser diode and manufacturing method thereof
  • Transient voltage suppresser diode and manufacturing method thereof

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Embodiment Construction

[0050] The preferred embodiments of the present invention are given below in conjunction with the accompanying drawings to describe the technical solution of the present invention in detail.

[0051] figure 2 It is the basic electronic circuit application diagram of the TVS diode of the present invention. like figure 2As shown, the ultra-low capacitance TVS diode of the present invention includes two steering diodes with small area and relatively high breakdown voltage---the first steering diode D1 and the second steering diode D2, one is reverse Zener diode Z with a breakdown voltage of 6V, the first steering diode D1, the second steering diode D2 and the Zener diode Z are connected in parallel, the first steering diode D1 and the second steering diode D2 are set There is an I / O interface, the P junction of the first steering diode D1 is connected to the N junction of the second steering diode D2, and a voltage signal line Vcc is provided between the first steering diode ...

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Abstract

The invention discloses a transient voltage suppresser diode and a manufacturing method thereof. The transient voltage suppresser diode comprises a first steering diode, a second steering diode and a Zener diode which are connected in parallel, wherein an input / output interface is arranged between the first steering diode and a second steering diode, and a voltage signal wire is arranged between the first steering diode and the Zener diode. The transient voltage suppresser diode has super low capacitance value and stable performance and can satisfy the requirement of large-scale production.

Description

technical field [0001] The invention relates to a diode, in particular to a transient voltage suppressor diode and a manufacturing method thereof. Background technique [0002] With the improvement of people's living standards, consumers have put forward higher requirements for the functions of various consumer electronics products (such as mobile phones, PDAs, MP3s, digital cameras, etc.), and increasing product features and reducing product size has become a The development trend of electronic products. Recently, the requirements for system integrated circuit chips are getting higher and higher: from single-function chips to multi-function chips with System On a Chip (SOC) as the mainstream. At the same time, consumer electronics products have strict restrictions on product power consumption, which makes the current working voltage of chips lower and lower, currently mainly 3.3V / 2.5V. With the increase of the I / O (input / output) interface of the multi-function chip and th...

Claims

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Application Information

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IPC IPC(8): H02H9/04H01L27/04H01L21/77H01L21/82H01L21/822
Inventor 纪刚倪凯彬顾建平
Owner WILL SEMICON (SHANGHAI) CO LTD
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