Method for growing high-quality indium nitride single crystal epitaxial film

Abstract

The invention provides a method for growing a high-quality indium nitride single crystal epitaxial film, which is to introduce small amount of halide while growing indium nitride, and comprises the following steps: selecting a substrate; placing the substrate in a metal-organic chemical vapor deposition system, raising the temperature, and introducing ammonia gas for pretreatment; and reducing temperature to a growth temperature, and simultaneously introducing trimethylindium (TMI), the ammonia gas (NH3) and the small amount of the halide to grow the high-quality indium nitride single crystalepitaxial film. The method can improve the crystallization quality of InN and the surface smoothness.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an epitaxial growth method of a high-quality indium nitride single crystal epitaxial film. Background technique [0002] Group III nitride semiconductor indium nitride (InN) has received more and more attention and research due to its unique physical and chemical properties. In Group III nitrides, InN has the smallest effective mass and theoretically has the highest carrier mobility, so it has broad application prospects in the field of high-speed devices; InN has the smallest direct bandgap, making it an infrared Suitable materials for wavelength light-emitting devices. However, due to the difficulty in the preparation of bulk single crystals of InN, there is no relevant report on the preparation of bulk single crystals. However, the preparation of InN single crystal epitaxial film becomes difficult because of the low decomposition temperature of InN and the lack of mat...

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Problems solved by technology

However, due to the relatively high requirement of the N equilibrium gas pressure on the surface during the growth process of InN, the decomposition temperature of InN is relatively low, which determines that InN can only grow at a lower growth temperature.

The MOCVD growth of InN uses ammonia gas as the N source. At a relatively low growth temperature (~500°C), the cracking efficiency of ammonia gas is very low, and the surface lacks reactive N atoms. The growth of InN is limited. In the InN epitaxy A small amount of indium droplets are often present in the film

On the other hand, at lower growth temperatures, the migration ability of surface adatoms is relatively low, and it is very difficult to grow high-quality InN single crystal epitaxial films.

Due to the existence of these problems, the crystalline quality of the InN single crystal epitaxial film is not very high, which cannot meet the requirements of device manufacturing.

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