Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Plasma processing apparatus and baffle plate of the plasma processing apparatus

一种等离子体、处理装置的技术，应用在离子体处理装置领域，能够解决自由基和离子分布不均匀等问题

Inactive Publication Date: 2011-11-23
TOKYO ELECTRON LTD
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the inside of the processing container is evacuated in this state, a pressure gradient is generated above the substrate to be processed, and the distribution of radicals and ions becomes uneven.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Plasma processing apparatus and baffle plate of the plasma processing apparatus
  • Plasma processing apparatus and baffle plate of the plasma processing apparatus
  • Plasma processing apparatus and baffle plate of the plasma processing apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0058] Hereinafter, a plasma processing apparatus according to an embodiment of the present invention will be described with reference to the drawings. figure 1 It is a schematic configuration diagram showing the whole of a plasma processing apparatus (etching apparatus).

[0059] exist figure 1 In , symbol 1 is a cylindrical chamber as a processing container. The end portion in the axial direction of the chamber 1 can close the inside so as to be airtight. On the side wall 1 a of the chamber 1 , there is provided a carry-in / out port (not shown) for carrying in and out a substrate to be processed. The loading and unloading port is opened and closed by a gate valve. The material of the chamber 1 is made of, for example, aluminum, stainless steel, or the like. Chamber 1 is grounded.

[0060] Inside the chamber 1, a susceptor 2 is provided as a mounting table on which a substrate to be processed such as a semiconductor wafer W is mounted. The base 2 is made of a conductiv...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a plasma processing apparatus capable of improving baffle plate flow conductance based on preventing plasma leakage. The plasma processing apparatus comprises: a processing container (1) for containing the processed substrate (W), a carrying bench (2) disposed in the processing container (1) for carrying the processed substrate (W), an inlet (17a) for introducing processinggas into the processing container (1), a high frequency power supply (13) for exciting the processing gas in the processing container (1) to generate plasma, a exhaust outlet (8) for discharging the processing gas in the processing container (1), and a baffle plate (7) having opening for passing the processing gas and capable of dividing the inner side do the processing container (1) into a plasma processing space (1b) and a exhaust space (1c). The opening of the baffle plate (7) is a slit (26) jointed by a plurality of slits. By joining a plurality of slits into one slit (26), the baffle plate flow conductance can be improved even the opening area is not changed.

Description

technical field [0001] The present invention relates to a plasma processing apparatus for performing etching and film formation on substrates to be processed such as semiconductor devices and LCD (liquid crystal display) substrates, and to a baffle arranged in an exhaust path of the plasma processing apparatus . Background technique [0002] A plasma processing apparatus can be used in dry etching or the like typically used in a manufacturing process of a semiconductor device. The plasma processing device introduces gas into the processing container, and the gas is excited by high frequency and microwaves to generate plasma and generate free radicals and ions. Then, the radicals and ions generated by the plasma react with the substrate to be processed, and the reaction products are turned into volatile gases, which are exhausted to the outside through the vacuum exhaust system. [0003] An inlet for introducing a processing gas is provided on the upper portion of the proce...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00H01L21/3065H01L21/205
CPCH01J37/32449H01J37/32623H01J37/32633
Inventor 佐藤彻治吉村章弘
Owner TOKYO ELECTRON LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com