Sealing structure for processing reaction chamber by semiconductor

Abstract

The invention relates to a sealing structure for processing a reaction chamber by semiconductor, which comprises cover plates which are mutually connected and jointly form the reaction chamber, a side wall of the chamber and an electrostatic clamping disc, wherein the joint of the side wall of the chamber and the cover plates and / or electrostatic clamping disc is provided with a clamping piece provided with a sealing piece; and the joint of the side wall of the chamber and the cover plates and / or electrostatic clamping disc is at least provided with a curved surface connecting part, and the inclination angle between the curved surface connecting part and the joint is between 0 and 90 degrees. The length of a gap is lengthened by changing the shape of the gap between the sealing surfaces of the vacuum ends, thereby prolonging the route by which chemical gases and plasmas reach a sealing ring and reducing the amount of the chemical gases and plasmas reaching the sealing ring; and simultaneously, the passing difficulty of the chemical gases and plasmas are greatly increased due to the curved shape, thereby prolonging the service life of the sealing ring.

Description

Technical field [0001] The invention relates to a sealing structure, in particular to a sealing structure used for a semiconductor processing reaction chamber and prolonging the life of a used sealing ring. Background technique [0002] Currently, semiconductor wafer processing is mainly carried out in a vacuum environment. The vacuum environment is realized by pumping the gas in the reaction chamber, and the closed environment of the reaction chamber is realized by the sealing ring. Many chemical gases and plasma devices are used in the processing of semiconductor wafers. Among them, inductively coupled plasma devices are widely used, such as dry etching equipment and chemical vapor deposition. The principle is: Under low pressure, the reaction gas is excited by radio frequency power to generate ionization to form plasma. The plasma is composed of charged electrons and ions. The gas in the reaction chamber is converted into ions under the impact of electrons. In addition, it can...

AI Technical Summary

Problems solved by technology

[0005] The defect of the above-mentioned prior art is that the processing of semiconductor wafers often uses various chemical gases and plasmas, such as figure 2 In the sealing structure shown, the upper and lower sealing surfaces are flat, and it is impossible to completely contact, there will always be a gap, and the gap between the two planes is a straight seam, which allows chemical gases and plasma to pass through this straight seam When in contact with the sealing ring, chemical gases and plasma will corrode the sealing ring, which will reduce the life of the sealing ring and require regular replacement

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