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Chemical-mechanical polishing liquid for copper process

A chemical mechanical and polishing liquid technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., to achieve the effects of reducing sticky dirt and other residues, ensuring polishing rate, and improving product yield

Active Publication Date: 2013-01-16
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, there is currently no effective plasma etching or wet etching of copper to fully form copper interconnects in integrated circuits, so chemical mechanical polishing of copper is considered to be the most effective alternative

Method used

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  • Chemical-mechanical polishing liquid for copper process
  • Chemical-mechanical polishing liquid for copper process
  • Chemical-mechanical polishing liquid for copper process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～7

[0018] Table 1 has provided polishing liquid 1~7 of the present invention, with formula in the table, each composition is mixed, and deionized water is surplus, finally with pH adjusting agent (20%KOH or dilute HNO 3 , select according to the needs of the pH value) to adjust to the required pH value, continue to stir until a uniform fluid, and stand still for 30 minutes to obtain various chemical mechanical polishing fluids.

[0019] Table 1 Polishing liquid 1~7 formula of the present invention

[0020]

[0021]

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PUM

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Abstract

The present invention discloses a chemical machinery polishing solution used in copper plating, which contains seat grinding granule, organanic phosphonic acid compounds, oxidizer, carrier and azole nitrogen compounds, wherein the azole nitrogen compounds at least includes benzotriazol and 1,2,4-triazole. The polishing solution provided in the invention is provided with appropriate copper / tantalum remove rate selection ratio to satisfy copper plating polishing requirement; can guaranty polishing rate of speed and deduce defect(local and whole corrosion, cullet cut, sticky dirt and other residue ) obviously at the same time, and can improve product yield rate.

Description

technical field [0001] The invention relates to a chemical mechanical polishing liquid, in particular to a chemical mechanical polishing liquid used in a copper manufacturing process. Background technique [0002] With the development of microelectronics technology, the integration of very large scale integrated circuit chips has reached billions of components, and the feature size has entered the nanometer level, which requires hundreds of processes in the microelectronics process, especially multi-layer wiring, Substrates and media must undergo chemical mechanical planarization. The material of VLSI wiring is changing from traditional Al to Cu. Compared with Al, Cu wiring has the advantages of low resistivity, high electromigration resistance, and short RC delay time, which can reduce the number of layers by half, reduce the cost by 30%, and shorten the processing time by 40%. The advantages of Cu wiring have attracted worldwide attention. [0003] However, there is cur...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/312
Inventor 徐春
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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