Chalcogenide infrared glass and preparation process thereof

A technology for infrared glass and preparation process, applied in the field of chalcogenide infrared glass and its preparation process, can solve the problems of inability to completely remove pollution, complicated operation process, etc., and achieve the effects of reducing equipment requirements, short process flow and improving production efficiency

Inactive Publication Date: 2009-06-03
XIAN TECHNOLOGICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The present invention provides a chalcogenide infrared glass and its preparation process to solve the problems in the prior art that the pollution of air and water to raw materials cannot be completely removed and the operation process is complicated

Method used

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  • Chalcogenide infrared glass and preparation process thereof
  • Chalcogenide infrared glass and preparation process thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] A chalcogenide infrared glass, prepared by the following process, which comprises the following steps in sequence

[0032] 1. Preparation of materials:

[0033] Glass raw materials include Ge, Se, and Sb with a purity of 99.999%, and they are formulated according to the following proportions, Ge is weighed by 28 atomic percent, Se is weighed by 63 percent atomic percent, and Sb is weighed by 9 percent atomic percent , dried for later use;

[0034] The impurity-removing elements include Al, Mg and rare earth, each added by 1%wt.

[0035] 2. Sealing:

[0036] Put the raw material and impurity-removing elements into two quartz crucibles respectively, connect the two crucibles, and then evacuate and heat the quartz crucibles until the vacuum degree reaches 1×10 -4 torr, the end of the quartz crucible is gradually sealed by melting with an oxyhydrogen flame.

[0037] 3. Sintering and impurity removal:

[0038] Put the sealed quartz crucible in a well-type three-stage el...

Embodiment 2

[0041] A chalcogenide infrared glass, prepared by the following process, which comprises the following steps in sequence

[0042] 1. Preparation of materials:

[0043] Glass raw materials include Ge, Se, and Sb with a purity of 99.999%, and they are formulated according to the following proportions, Ge is weighed by 18% atomic percentage, Se is weighed by 72% atomic percentage, and Sb is weighed by 10% atomic percentage , dried for later use;

[0044] The impurity-removing elements include Al, Mg and rare earth, each added by 0.9%wt.

[0045] 2. Sealing:

[0046]Put the raw materials and impurity-removing elements into two quartz crucibles respectively, connect the two crucibles and then evacuate and heat the quartz crucibles until the vacuum degree reaches 1×10 -4 torr, the end of the quartz crucible is gradually sealed by melting with an oxyhydrogen flame.

[0047] 3. Sintering and impurity removal:

[0048] Put the sealed quartz crucible in a well-type three-stage elec...

Embodiment 3

[0051] A chalcogenide infrared glass, prepared by the following process, which comprises the following steps in sequence

[0052] 1. Preparation:

[0053] The glass raw materials include Ge, Se, and Sb with a purity of 99.999%, and they are formulated according to the following proportions, Ge is weighed by 25% atomic percent, Se is weighed by 64% atomic percent, and Sb is weighed by 11% atomic percent , dried for later use;

[0054] The impurity-removing elements include Al, Mg and rare earths, Al and Mg are added at 1.2%wt each, and the rare earths are added at 0.9%wt.

[0055] 2. Sealing:

[0056] Put the raw materials and impurity-removing elements into two quartz crucibles respectively, connect the two crucibles and then evacuate and heat the quartz crucibles until the vacuum degree reaches 1×10 -4 torr, the end of the quartz crucible is gradually sealed by melting with an oxyhydrogen flame.

[0057] 3. Sintering and impurity removal:

[0058] Put the sealed quartz c...

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Abstract

The invention relates to the technical field of optical system device materials of infrared thermal imagers, particularly chalcogenide infrared glass and the preparation process thereof. The technical scheme to solve the problem of the prior art that the raw material pollution caused by air and water can not be eliminated and the operation process is complex is that chalcogenide infrared glass is prepared by a process which comprises the following steps in sequence: 1,feed preparing: drying raw material for reservation; 2, sealing: putting glass raw material and edulcorated elements in quartz crucibles respectively and connecting the two crucibles, vacuum-pumping and heating, and then sealing; and 3, edulcorating and sintering: placing the sealed quartz tubes in an electric furnace, starting to heat up the sealed quartz tubes slowly to ensure that Se and Sb can be melted, then heating continuously to ensure complete reaction, and cooling freely. Compared with the prior art, the chalcogenide infrared glass and the preparing process therefore have the advantages that: 1, the quality is effectively improved; 2, the process is simple; 3, the cost is low; and 4, the production efficiency is high.

Description

Technical field: [0001] The invention relates to the technical field of infrared thermal imager optical system device material and preparation process, in particular to a chalcogenide infrared glass and a preparation process thereof. Background technique: [0002] One of the important reasons that hinder the widespread commercial application of thermal imaging systems is their high price. At present, the materials used for the optical components of the thermal imaging system are generally single crystal germanium or single crystal zinc selenide. Due to the complex production process of these materials, their production costs are very high, in view of which people seek other alternative materials to reduce costs. Studies have found that chalcogenide glasses have good infrared transmission properties, and are much easier to prepare and process than growing single crystals, and are not limited by size. Therefore, this material has great development value and is regarded as a ...

Claims

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Application Information

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IPC IPC(8): C03C4/00C03C3/253C03C3/32
Inventor 坚增运常芳娥刘卫国介万奇
Owner XIAN TECHNOLOGICAL UNIV
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