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NAND flash memory optimizing and managing method based on data interchange zone

A data exchange and management method technology, applied in the field of NAND Flash flash memory optimization management based on the data exchange area, can solve the problems of file system damage, lifespan reduction, etc., achieve balanced wear, increase read and write speed, and reduce write frequency Effect

Active Publication Date: 2009-03-11
SLICONGO MICROELECTRONICS INC
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  • Application Information

AI Technical Summary

Problems solved by technology

[0028] The object of the present invention is to provide a kind of NAND Flash optimization management method based on the data exchange area, especially optimize and improve based on the file system of NAND Flash, solve the problem caused by the damage of the file system of NAND Flash due to the rapid wear and tear of the system file area The problem of shortening the lifespan caused by it, and greatly improving the speed of file copying of large-capacity NAND Flash in the case of low cache consumption

Method used

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  • NAND flash memory optimizing and managing method based on data interchange zone
  • NAND flash memory optimizing and managing method based on data interchange zone
  • NAND flash memory optimizing and managing method based on data interchange zone

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Embodiment Construction

[0054] Various preferred embodiments of the present invention will be described in more detail below in conjunction with the accompanying drawings.

[0055] The realization of the method of the present invention needs to rely on the existing NAND Flash flash storage structure system, such as image 3 The shown internal flash memory storage structure system is a brief schematic diagram, and the operation of the NAND Flash is realized by a flash controller outside. This flash controller is usually embedded with a CPU or a microprocessor, such as 8051, ARM series, etc. The inventive method needs The control is realized by the instruction of the controller. The operating characteristic of NAND Flash is to write (or program) or read in units of pages. A page cannot be written repeatedly, and must be erased before repeated writing. The erasure is performed in units of BLOCK blocks (the reason is that the write operation can change the storage unit from 1 to 0, but not from 0 to 1; ...

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Abstract

The invention discloses a NAND Flash memory optimization management method based on a data exchange zone, which comprises the following steps: at least 2 blocks are set on the NAND Flash as the data exchange zone; a dynamic data effectiveness identification item is added for recording the aging degree of the data blocks in the data exchange zone; and the data block, before being modified during the setting period, is written into the real physical address of the flash memory after a logical address is re-mapped. By the management method, through the data exchange zone of a plurality of blocks set in the NAND Flash chip by a flash memory controller, the mid-process data during the read-write is stored by buffering, thus reducing the write-in frequency in the system document zone of the NAND Flash chip, increasing the read-write speed of the chip, as well as balancing the abrasion of the chip and prolonging the service life of the NAND Flash.

Description

technical field [0001] The invention relates to an internal data management method of a flash memory, in particular to a method for optimizing the management of a NAND Flash flash memory based on a data exchange area. Background technique [0002] Flash memory in the prior art has been widely used in mobile storage devices, such as USB flash drives, SD cards, and SSD solid state drives; NOR and NAND Flash flash memory are two main non-volatile flash memory technologies on the market today. Intel first developed NOR Flash technology in 1988, which completely changed the situation where EPROM and EEPROM dominated the world. In 1989, Toshiba Corporation published the NAND Flash structure, emphasizing the reduction of cost per bit, higher performance, and it can be easily upgraded through the interface like a disk. Since flash memory is only used to store a small amount of code in most cases, NOR flash memory is more suitable at this time, while NAND flash memory is an ideal so...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F12/06
Inventor 谭四方罗胜
Owner SLICONGO MICROELECTRONICS INC
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