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Electrostatic discharge protecting circuit and electronic product using the same

A technology of electrostatic discharge protection and discharge circuit, which is applied in the direction of emergency protection circuit device, emergency protection circuit device, circuit, etc. for limiting overcurrent/overvoltage, and can solve the problems of complex layout design and occupied layout area, and achieve technological The effect of low dependency, fast response speed, and simple layout requirements

Active Publication Date: 2009-03-04
BYD SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At the same time, the second-level protection circuit also occupies the layout area, making the layout design more complicated

Method used

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  • Electrostatic discharge protecting circuit and electronic product using the same
  • Electrostatic discharge protecting circuit and electronic product using the same
  • Electrostatic discharge protecting circuit and electronic product using the same

Examples

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Embodiment Construction

[0012] figure 1 Shown is a specific circuit diagram of the electrostatic discharge protection circuit 100 of the present invention. The ESD protection circuit 100 is used to protect integrated circuits from ESD damage, and includes a discharge circuit 110 and a clamping circuit 120 . Wherein, the discharge circuit 110 is used to provide a discharge path, which includes a first MOS transistor MP1 and a switch element M. As shown in FIG. The switch element M is a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), which has an input terminal, a first output terminal and a second output terminal. In this embodiment, the input end of the switching element M is a gate, the first output end thereof is a drain, and the second output end thereof is a source.

[0013] The gate of the switching element M is connected to the gate of the first MOS transistor MP1, the drain thereof is connected to the drain of the first MOS transistor MP1, and the source thereof is connected to ...

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PUM

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Abstract

An electrostatic discharge protection circuit used for protecting an integrated circuit from being damaged by electrostatic discharge comprises at least one discharge circuit and a clamp circuit, wherein, the discharge circuit comprises a first MOS transistor and a switching element. A source electrode of the first MOS transistor is used for receiving an input electrostatic discharge signal; the switching element is provided with an input terminal, a first output terminal and a second output terminal, wherein, the input terminal is connected with a grid electrode of the first MOS transistor, the first output terminal is connected with a drain electrode of the first MOS transistor, and the second output terminal is grounded. The clamp circuit is connected with the discharge circuit to provide a first voltage to the discharge circuit when in normal work, so as to close the discharge circuit; when the electrostatic discharge occurs, the clamp circuit provides a second voltage to the discharge circuit so as to open the discharge circuit. The electrostatic discharge protection circuit effectively protects the integrated circuit from being damaged by the electrostatic discharge, and has simple structure and quick response. In addition, the invention further provides an electronic product using the electrostatic discharge protection circuit.

Description

technical field [0001] The invention relates to an electrostatic discharge protection circuit, in particular to an electrostatic discharge protection circuit applied to electronic product integrated circuits. Background technique [0002] With the development of science and technology, various electronic products, such as Bluetooth earphones, are more and more widely used. Typically, these electronic products require smaller internal components. At present, with the advancement of manufacturing process technology, the size of the components has been reduced to the deep submicron stage. However, in the deep submicron technology, due to the process technology and the smaller size of the components, the integrated circuit is less sensitive to electrostatic discharge. The protection ability is reduced, which in turn leads to the damage of integrated circuits due to electrostatic discharge and reduces the service life of electronic products. Therefore, it is necessary to enhanc...

Claims

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Application Information

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IPC IPC(8): H02H9/00H01L23/60
CPCH01L2924/0002H01L27/0266
Inventor 黄宇聪杨云冯卫
Owner BYD SEMICON CO LTD
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