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Interpenetrating network for chemical mechanical polishing

A chemical-mechanical, interpenetrating network technology, applied to surface polishing machine tools, machine tools suitable for grinding workpiece planes, grinding/polishing equipment, etc., can solve the problem of not showing large void volumes

Active Publication Date: 2009-02-18
ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Second, slurry flow in a thin layer over the pad surface is not optimal for removing debris and heat from the workpiece
There is also a need for a CMP pad structure that provides high void volume in the polishing layer immediately adjacent the polishing surface to facilitate good access of the slurry to the single contact point of the polishing pad with the workpiece, but does not exhibit large void volume in the polishing layer remote from the polishing surface (This void volume may support the accumulation of stagnant slurry and polishing waste)

Method used

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  • Interpenetrating network for chemical mechanical polishing
  • Interpenetrating network for chemical mechanical polishing
  • Interpenetrating network for chemical mechanical polishing

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Embodiment Construction

[0028] As used herein and in the appended claims, the term "chemical bond" refers to an attractive force between atoms, including covalent, ionic, metallic, hydrogen, and van der Waals forces.

[0029] The term "fibrillar morphology" as used herein and in the appended claims refers to the morphology of a phase in which the domains of the phase have a three-dimensional shape with one dimension much larger than the other two.

[0030] As used herein and in the appended claims, the term "unstable phase" refers to a phase that melts, dissolves, or disintegrates upon exposure to at least one of polishing media and heat.

[0031] As used herein and in the appended claims, the term "hydrodynamic layer" refers to a region of the polishing layer immediately adjacent to the polishing surface that is substantially free of co-continuous fugitive phases.

[0032] The term "interpenetrating network" as used herein and in the appended claims refers to a network comprising a continuous durabl...

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Abstract

Chemical mechanical polishing pads are provided, wherein the chemical mechanical polishing pads have a polishing layer comprising an interpenetrating network including a continous non-fugitive phase and a substaintially co-continuous fugitive phase. Also provided are methods of making the chemical mechanical polishing pads and for using them to polish substrates.

Description

technical field [0001] The present invention relates generally to the field of polishing pads for chemical mechanical polishing. In particular, the present invention relates to a chemical mechanical polishing pad having a polishing structure useful for chemical mechanical polishing of magnetic, optical, and semiconductor substrates. Background technique [0002] In the manufacture of integrated circuits and other electronic devices, layers of conductive, semiconducting, and dielectric materials need to be deposited on and removed from the surface of semiconductor wafers. remove. Thin layers of conductive, semiconducting, and dielectric materials can be deposited using several deposition techniques. Common deposition techniques in modern wafer processing include physical vapor deposition (PVD) (also known as sputter coating), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), and electrochemical plating, among others . Common removal techn...

Claims

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Application Information

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IPC IPC(8): B24D13/14B24B29/00H01L21/304B24D99/00
CPCB24B37/26B24B37/22B24B7/228B24D13/14B24B37/24B24D11/005Y10T428/24355H01L21/304
Inventor G·P·马尔多尼
Owner ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC
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