Method for removing forerunner of atom layer deposition process

Abstract

Disclosed is a precursor elimination method in the atomic layer deposition process, which is included in the time period of the precursor elimination step of the atomic layer deposition process. Through inert gas periodic filling and stopping filling, the residual precursor and the by-product in a reaction chamber can be effectively eliminated. The time period of the precursor elimination step indicates the period from the end of a precursor feeding step to the beginning of the next precursor feeding.

Description

Technical field [0001] The present invention relates to a precursor removal method of an atomic layer deposition process, and particularly relates to a removal method that can improve the precursor removal efficiency. Background technique [0002] Atomic layer deposition (ALD) is a method commonly used to deposit high-quality thin films in semiconductor processes. Its characteristic is that the substrate to be deposited is sequentially exposed to two or more types in the reaction chamber, and Under the atmosphere of a precursor gas with complementary characteristics, using the self-limiting reaction characteristics, selective chemical adsorption is performed on the surface of the substrate, and a very uniform atomic thickness film is grown. The deposition step of the material achieves the characteristics of the desired film. [0003] After each precursor deposition step is completed, before the deposition of the next precursor, an inactive gas, such as an inert gas such as argon,...

AI Technical Summary

Problems solved by technology

In order to ensure the best film quality, the main feature of the atomic layer deposition process is the step of removing (purge) the precursor between the two precursor feeding steps, and there must be sufficient time for this step to remove the residual Precursors and their by-products, however, the deposition rate of the ALD process has not been significantly improved

Images