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Method for manufacturing gas sensor for testing hydrogen

A gas sensor, hydrogen technology, applied in the direction of measuring devices, instruments, scientific instruments, etc., can solve the problems of inability to meet the real-time detection of hydrogen, poor sensitivity and selectivity, and achieve excellent structural stability and selectivity, high sensitivity and selectivity The effect of high performance and simple manufacturing process

Inactive Publication Date: 2008-08-27
CHONGQING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The chemical sensor devices usually used for hydrogen detection are mainly single metal oxides such as tin oxide, zinc oxide, and tungsten oxide, which have poor sensitivity and selectivity, and cannot meet the needs of real-time detection of hydrogen leakage in industrial production and people's lives.
In addition, there are few studies and reports on the detection of colorless, odorless, flammable and explosive hydrogen.

Method used

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  • Method for manufacturing gas sensor for testing hydrogen
  • Method for manufacturing gas sensor for testing hydrogen
  • Method for manufacturing gas sensor for testing hydrogen

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Preparation of Nano ZnSnO 3 Binder:

[0031] According to cation Zn 2+ / Sn 4+ Zn(SnO 4 ) 2 ·7H 2 O and SnCl 4 ·5H 2 O solution 3L, Zn(SnO 4 ) 2 ·7H 2 The O solution was diluted twice, and the SnCl 4 ·5H 2 O solution was diluted two-fold. To the diluted soluble zinc salt Zn(SnO 4 ) 2 ·7H 2 O solution is slowly dripped with ammonia water with a concentration of 1mol / L, and the pH value of the solution is adjusted to 11; to the diluted SnCl 4 ·5H 2 Concentrated hydrochloric acid was added dropwise to the O solution to adjust the pH of the solution to 6, and magnetic stirring was continued. Adjust the acidity SnCl 4 ·5H 2 O solution was slowly added to adjust the acidity Zn(SnO 4 ) 2 ·7H 2 In the O solution, ammonia water was added dropwise, and the stirring was continued until the solution pH=7, and the precipitate ZnSnO 3 . ZnSnO 3 Precipitation adopts constant temperature water bath magnetic stirrer (produced by Beijing Changfeng Instrument Co., ...

Embodiment 2

[0037] Embodiment two: the PdCl of the present embodiment 2 The addition amount is nanometer ZnSnO 3 8% of base material gross mass, other steps are identical with embodiment one, and the average particle diameter of gained particle is about 45nm, and Pd 2+ Evenly dispersed in ZnSnO 3 in the body.

Embodiment 3

[0038] Embodiment three: the PdCl of the present embodiment 2 The addition amount is nanometer ZnSnO 3 10t% of the total mass of the base material, other steps are the same as in Example 1, and the average particle diameter of the obtained particles is about 55nm, and the Pd 2+ Inhomogeneously dispersed in ZnSnO 3 in the body.

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Abstract

The invention relates to a preparation method for a gas sensor for detecting hydrogen, wherein, ultrasonic wave and low-temperature aging technologies are applied in the complex effect of zinc salts and stannum salts and chemical coprecipitation for preparation of nano ZnSnO3. The invention prepares the novel PdO-ZnSnO3 heater type semiconductor gas sensor by isomerisation of noble metal salts PdCl2, adhesives (ethyl orthosilicate) and deionized water through technologies like grinding, ultrasonic vibration, coating, sintering, etc. on the basis of the nano ZnSnO3, wherein, nano ZnSnO3 bases are prepared by adoption of an improved coprecipitation method. The preparation method for the gas sensor for detecting hydrogen has the advantages of high sensitivity of gas sensitive materials, strong selectivity, low operation temperature, simple preparation technology and so on.

Description

technical field [0001] The invention belongs to the technical field of semiconductor sensor gas sensor manufacturing technology, and in particular relates to a method for preparing a gas sensor for detecting hydrogen. Background technique [0002] At present, there are many types of metal oxide semiconductor gas sensors used for gas alarm and monitoring, and the commonly used ones are doped with SnO 2 , ZnO, Fe 2 o 3 、WO 3 And various gas sensitive sensors modified by doping other metal oxides. Among all kinds of gas sensors, semiconductor gas sensors have a relatively large share in the market due to their simple structure, low price, small size, low power, and fast response. However, the sensitivity, selectivity, stability and other gas sensitive properties of these single metal oxide gas sensing elements are not ideal enough, so people have researched and developed composite metal oxide gas sensing elements. [0003] ZnSnO 3 It is an N-type compound oxide semiconduc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/407
Inventor 刘天模甘浩宇利佳赵先瑞
Owner CHONGQING UNIV
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