Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Adjustable active inductance irrespective to temperature and supply voltage

A technology of active inductance and power supply voltage, which is applied in the direction of improving the network, impedance converter, multi-terminal pair network, etc. to reduce the influence of temperature changes, and can solve the problems of equivalent inductance value change, etc. The effect of high factor and easy tuning

Inactive Publication Date: 2008-05-07
FUDAN UNIV
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But its disadvantage is that the equivalent inductance value of the active inductance will change with the temperature and power supply voltage, so the performance of the overall circuit

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Adjustable active inductance irrespective to temperature and supply voltage
  • Adjustable active inductance irrespective to temperature and supply voltage
  • Adjustable active inductance irrespective to temperature and supply voltage

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] The present invention will be further described below in conjunction with the accompanying drawings.

[0025] In the active inductance circuit shown in Figure 2, MOS transistors 6, 7, 8, 9, 16, 17, 12, 13, 20, 21, 22, and 23 constitute the automatic gain control amplifier 3 in Figure 1, and its gain It can be adjusted by external control signals connected to nodes 25 and 26; MOS transistors 5, 10, 11 and 14 constitute the fixed gain amplifier 4 in Fig. 1, and its gain cannot be adjusted. In the automatic gain control amplifier, the NMOS tubes 12 and 13 form N-type common-gate amplifier tubes; the PMOS tubes 7 and 8 are cross-coupled and connected in parallel with the PMOS tube constant current sources 6 and 9 to form the load of the common-gate amplifier tubes 12 and 13; The PMOS tubes 16 and 17 are P-type common grid amplifier tubes; the NMOS tubes 21 and 22 are cross-coupled and connected in parallel with the NMOS tube constant current sources 20 and 23 to form the lo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the technical field of integrated circuits, in particular to an adjustable active inductance independent of temperature and power supply voltage. It is mainly composed of active inductors and their control circuits. Among them, the active inductor uses a two-stage loop-back amplifier as the equivalent inductance of the active inductor, and the control circuit is composed of a two-stage operational amplifier and a feedback control loop. The control circuit generates a control voltage through comparison and feedback, which is used to bias the active inductance circuit, so that its transconductance stability is only related to the external control voltage, and has nothing to do with the power supply voltage and temperature. The equivalent inductance value of the active inductance proposed by the present invention is only controlled by the external input control voltage, and has a linear relationship with it.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, and in particular relates to an adjustable active inductance independent of temperature and power supply voltage. Background technique [0002] With the continuous improvement of people's living needs and the rapid development of electronic technology, various wireless communication protocols have sprung up like mushrooms. In addition to the well-known GSM, CDMA, GPS, WLAN (802.11a, 11b, 11g), and ZigBee, experts predict that a new wireless protocol will be born every six months or so in the future. This forces people to continuously purchase and configure various new hardware to synchronize protocol updates, which brings great inconvenience to people's lives. In order to alleviate this problem, domestic and foreign industries and academic circles have launched research on multi-mode transceivers and software radio technology. The purpose is to design a hardware system compatible wit...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03H11/40H03H11/54
Inventor 曹圣国成诗伟周晓方
Owner FUDAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com