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Method for preparing monocrystalline germanium nano thread by solvent hot decomposition process

A decomposition method and single-crystal germanium technology, applied in the direction of single-crystal growth, single-crystal growth, chemical instruments and methods, etc., can solve the problems of demanding preparation process, high cost, complicated preparation process, etc., and achieve simple preparation method and low cost Low, evenly distributed effect

Inactive Publication Date: 2008-04-09
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantages of these methods are that the preparation process is complicated, the cost is high, and the preparation process is demanding.

Method used

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  • Method for preparing monocrystalline germanium nano thread by solvent hot decomposition process
  • Method for preparing monocrystalline germanium nano thread by solvent hot decomposition process

Examples

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Embodiment 1

[0023] GeCl 4 Reaction with oleylamine at a ratio of 1:4 yielded light yellow precursor oleylamine germanium TOG: [(CH 3 (CH 2 ) 7 CH=CH(CH 2 ) 7 CH 2 NH 2 ) 4 Ge] 4+ ·(Cl - ) 4 ; At the same time, take 8ml of trioctylamine and add it to the three-necked flask and heat it to 200°C. At this time, take TOG 9*10 -4 mol was added to the flask, and the temperature was raised to 360°C at a rate of 1°C / min, and reacted for 4 hours. After the reaction, the solution was centrifuged at a centrifugal speed of 10000r / min for 20min. The obtained solid was dispersed with 20 ml of ethanol and ultrasonically washed, centrifuged again, and repeated twice, and the product was dried at room temperature. The transmission electron microscope photo of the product can be found in figure 1 (a), TOG is 9*10 -4 mol, wire diameter 20nm. figure 2 yes figure 1 (a) Morphology and characterization of germanium nanowires:

[0024] (a) SEM photo of a germanium nanowire; (b) high-resolution TE...

Embodiment 2

[0026] GeCl 4 Reaction with oleylamine at a ratio of 1:5 yielded light yellow precursor oleylamine germanium TOG: [(CH 3 (CH 2 ) 7 CH=CH(CH 2 ) 7 CH 2 NH 2 ) 4 Ge] 4+ ·(Cl - ) 4 ; At the same time, take 8ml of trioctylamine and add it to the three-necked flask and heat it to 200°C. At this time, take TOG 1.8*10 -3 mol was added to the flask, and the temperature was raised to 360°C at a rate of 1°C / min, and reacted for 4 hours. After the reaction, the solution was centrifuged at a centrifugal speed of 10000r / min for 20min. The obtained solid was dispersed with 20 ml of ethanol, washed with ultrasonic waves, centrifuged again, and repeated twice, and the product was kept at room temperature. The transmission electron microscope photo of the product can be found in figure 1 (b), TOG is 1.8*10 -4 mol, wire diameter 47nm.

Embodiment 3

[0028] GeCl 4 Reaction with oleylamine at a ratio of 1:6 yielded light yellow precursor oleylamine germanium TOG: [(CH 3 (CH 2 ) 7 CH=CH(CH 2 ) 7 CH 2 NH 2 ) 4 Ge] 4+ ·(Cl - ) 4 ; At the same time, take 8ml of trioctylamine and add it to the three-necked flask and heat it to 200°C. At this time, take TOG 2.7*10 -3 mol was added to the flask, and the temperature was raised to 360°C at a rate of 1°C / min, and reacted for 4 hours. After the reaction, the solution was centrifuged at a centrifugal speed of 10000r / min for 20min. The obtained solid was dispersed with 20 ml of ethanol and ultrasonically washed, centrifuged again, and repeated twice, and the product was dried at room temperature. The transmission electron microscope photo of the product can be found in figure 1 (c), TOG is 2.7*10 -4 mol, wire diameter 115nm.

[0029] figure 1 (d) XRD patterns corresponding to the samples of the above three examples.

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Abstract

The invention discloses a solvent thermal decomposition method for the preparation of a single crystal germanium nanowire. Trioctylamine is employed as high boiling point solvent to decompose an organic germanium precursor, and a germanium nanowire with micron grade length and single growth direction and controllable wire diameter ranging from 20 to 120 nm. The influences of different reaction time and different precursor concentration to the preparation of germanium nanowire are compared, and the methods for the preparations of different nanowires are summarized according to the experimental results. The preparation method is simple and can be easily controlled, and the prepared germanium nanowires have important application prospects in the design and manufacture of semiconductor devices and optic devices.

Description

technical field [0001] The invention relates to the preparation of nanometer materials, in particular to a method for preparing single-crystal germanium nanowires by a solvothermal decomposition method. Background technique [0002] Nanoscience and nanotechnology are currently one of the most dynamic research fields, and one-dimensional semiconductor nanomaterials have attracted more and more attention from scientists because of their special electrical and optical size dependence and their potential applications in the modern electronics industry. With increasing attention, the preparation and characterization of one-dimensional semiconductor nanomaterials such as nanowires, nanorods, nanotubes, and nanoribbons have been extensively carried out. Germanium is a very important semiconductor element in group IV. Due to its high carrier mobility, it is considered to be an ideal material for the preparation of high-speed electronic devices. At the same time, germanium has very u...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/08C30B29/62
Inventor 蒋建中葛明圆吴海平许晓斌王岑
Owner ZHEJIANG UNIV
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