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Method for forming grid medium layer and estimating its electrical parameter

A gate dielectric layer and electrical parameter technology, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve problems such as the inability to evaluate the electrical parameters of the gate dielectric layer online, and achieve improved electrical stability and Reliability, cost savings, and the effect of reducing R&D cycles

Inactive Publication Date: 2008-04-02
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology

[0004] The invention provides a method for evaluating the gate dielectric layer to solve the existing problem that the electrical parameters of the gate dielectric layer cannot be evaluated online

Method used

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  • Method for forming grid medium layer and estimating its electrical parameter
  • Method for forming grid medium layer and estimating its electrical parameter
  • Method for forming grid medium layer and estimating its electrical parameter

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Embodiment Construction

[0022] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0023] The gate dielectric layer plays a very important role as an insulating layer between the gate and the conductive channel of the substrate. The physical characteristic parameters of the gate dielectric layer will affect the formed device leakage current, turn-on voltage, carrier migration performance, and response speed The isoelectric parameter is also referred to as the electrical parameter of the gate dielectric layer in the present invention. Especially with the development of semiconductor technology to the technical node of 90nm and below, the thickness of the gate dielectric layer has been reduced to 5nm or even smaller. Controlling process parameters to form a high-quality gate dielectric layer is a problem that process pe...

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Abstract

A method for evaluating electrical parameters of grid dielectric layer comprises that: the film physical characteristic parameters of a grid dielectric layer and the electrical parameters of a device formed by the grid dielectric layer are measured; the correlation curves between the physical characteristic parameters and the electrical parameters are fitted and correlation coefficients are calculated; the physical characteristic parameters having closer relationship with electrical parameter phases are found out; the physical characteristic parameters of the grid dielectric layer is measured on line; the electrical parameters are predicted through the physical characteristic parameters having closer relationship with the electrical parameter phases. The method of the present invention can evaluate the electrical parameters of the grid dielectric layer on line.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for evaluating electrical parameters of a gate dielectric layer and forming a gate dielectric layer. Background technique [0002] With the development of semiconductor technology, more devices need to be integrated in a limited area, and the size of corresponding devices needs to be reduced. With the help of advanced photolithography technology, such as 193nm, 157nm and immersion exposure technology, the gate length representing the semiconductor process level can reach 90nm, or even 65nm. The turn-on voltage applied to the gate gradually becomes smaller, and correspondingly, the thickness of the gate dielectric layer becomes thinner, so as to increase the response speed of the device. In particular, for the current semiconductor process of 90nm and below, the thickness of the gate oxide has been reduced to 5nm or even smaller. Chinese patent appli...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66H01L21/283H01L21/31H01L21/336
Inventor 刘云珍何永根郭佳衢
Owner SEMICON MFG INT (SHANGHAI) CORP
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