Processing device for processing fluid and substrate processing device having the same

Abstract

The present invention provides a substrate processing device which prolongs the replacing period of the processing liquid, prevents substrate processing efficiency from reducing and restrains substrate processing cost. The substrate processing device (1) comprises: a first processing liquid cycle mechanism (20) to ensure the processing liquid cycle between a storage trough (11) and a substrate processing mechanism (12); two absorption towers (32, 33), for absorbing metal ions contained in the processing liquid after the substrate processing of the substrate processing mechanism (12); a second processing liquid cycle mechanism (34), for supplying processing liquid of the storage trough (11) for arbitrary one of the absorption towers (32, 33) and ensuring the processing liquid cycle; and a control device (28), for controlling the motion of the second processing liquid cycly mechanism (34), so as to make the absorption towers (32, 33) be switched alternately based on prescribed time interval.

Description

technical field [0001] The present invention relates to a processing liquid processing apparatus for removing metal ions contained in a processing liquid for substrate processing, and a substrate processing apparatus including the same. Background technique [0002] In the process of manufacturing various substrates such as semiconductor (silicon) wafers, liquid crystal glass substrates, glass substrates for photomasks, substrates for optical discs, etc., various processing liquids such as etching solutions, developing solutions, and cleaning solutions are supplied to these substrates and process the substrate. [0003] In addition, as a substrate processing apparatus used in this step, for example, an etching apparatus disclosed in JP 2000-96264 A has been conventionally known. The etching device includes: a storage tank for storing etching solution; a substrate processing mechanism for etching the substrate by the etching solution; an etching solution circulation mechanis...

AI Technical Summary

Problems solved by technology

Therefore, in the above-mentioned conventional etching apparatus configured in such a manner that the etching solution is circulated between the storage tank and the substrate processing mechanism, the concentration of the above-mentioned metal contained in the etching solution gradually increases. , there will be problems such as the decrease of etching speed and the inability to obtain high-precision etching shapes.

In addition, if the concentration of the above-mentioned metal contained in the etching solution increases, the oxide of the metal will be generated in the etching solution, the components of the etching solution will crystallize and precipitate, and the precipitate will adhere to the inner surface of the storage tank or form particles. The problem of adherence to the substrate in the form of the form, and the problem of having to periodically remove the precipitates adhering to the inner surface of the storage tank

[0010] Therefore, in the above-mentioned existing etching device, the etching solution in the storage tank must be replaced regularly, and since the etching process cannot be performed during the replacement of the etching solution, the substrate processing efficiency is reduced.

In addition, due to the reduction in processing efficiency and the cost of replacing the etching solution (the disposal cost of the replaced etching solution and the purchase cost of the replaced etching solution), the etching treatment cost will increase.

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