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Waveguide structure and optical device

A waveguide structure and optical element technology, applied in optical elements, optical waveguide light guides, optics, etc., can solve the problems of short propagation distance of surface plasmon wave, difficult manufacturing, and 100 attenuation of surface plasmon wave.

Inactive Publication Date: 2008-01-16
HAMAMATSU PHOTONICS KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, as described above, since the dielectric constant ε of the conductive substance 111 m has an imaginary part ε mi , so the surface plasmon wave 100 will attenuate during propagation
Therefore, in the techniques disclosed in Non-Patent Document 1 and Patent Document 1, there is a problem that the propagation distance L of the surface plasmon wave 100 is short.
In addition, since metal is used in the technology disclosed in Non-Patent Document 1, processing is difficult, and as a result, manufacturing is difficult

Method used

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no. 1 Embodiment approach

[0070] Fig. 1 is a perspective view of an embodiment of the optical element of the present invention. Fig. 2 is a cross-sectional view along the line II-II of Fig. 1 and an enlarged schematic view of a part thereof. Fig. 3 is a cross-sectional view along the line III-III of Fig. 1 and an enlarged schematic view of a part thereof. One embodiment of the waveguide structure of the present invention is used in the optical element 1A. The optical element 1A shown in Fig. 1 is used for detecting the wavelength of 30μm~1000μm (or the vibration frequency of 1.9×10 12 ~6.3×10 13 (1 / sec)) light is a THz wave light-receiving element of THz wave.

[0071]The optical element 1A has a semiconductor substrate 10 made of, for example, GaAs that can propagate THz waves, and a layered waveguide section 20 is laminated on the semiconductor substrate 10. In the following description, the lamination direction (arrangement direction) in which the waveguide portion 20 is laminated with respect to the se...

no. 2 Embodiment approach

[0117] Fig. 12 is a perspective view of a second embodiment of the optical element of the present invention. The main difference in structure between the optical element 1B and the optical element 1A is that the periodic structure portion 25B of the waveguide portion 20 has a concavo-convex pattern 26 in the X-axis direction, but does not have a concavo-convex pattern in the Y-axis direction. The optical element 1B will be described centering on this point.

[0118]In the waveguide portion 20 laminated on the semiconductor substrate 10 of the optical element 1B, an opening (light-concentrating portion) 24 is formed, and regions on both sides of the opening 24 are periodic structure portions 25B and 25B. Furthermore, the periodic structure part 25B has a concavo-convex pattern 26 which functions as a surface plasmon wave generator having a period Λ1.

[0119] The optical element 1B can be manufactured by the following method, for example. First, the steps shown in FIGS. 5 to 8 in t...

no. 3 Embodiment approach

[0122] Fig. 13 is a perspective view of a third embodiment of the optical element of the present invention. Fig. 14 is a cross-sectional view taken along the line XIV-XIV of Fig. 13.

[0123] The optical element 1C is a THz wave generating element that generates THz waves. The main difference in structure between the optical element 1C and the optical element 1B of the second embodiment is that in the optical element 1C, a semiconductor layer 50 is also laminated on the waveguide portion 20 laminated on the semiconductor substrate 10, and the semiconductor layer 50 is A THz wave generator 60 is provided on the surface 51. The optical element 1C will be described centering on this point. Here, the dashed-dotted lines in FIGS. 13 and 14 are schematic lines for explaining the boundary between the semiconductor substrate 10 and the semiconductor layer 50. In addition, in FIG. 13 and FIG. 14, in order to explain the structure of the waveguide section 20, the waveguide section 20 is sho...

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Abstract

There is disclosed a waveguide structure that propagates surface plasmon waves, comprising: a quantum well structure, disposed on a semiconductor substrate; wherein the quantum well structure has a quantum well layer, in turn having an intersecting region that intersects a hypothetical plane substantially orthogonal to an alignment direction of the quantum well structure with respect to the semiconductor substrate, and a real part of a dielectric constant of the quantum well structure is negative for THz waves of a predetermined wavelength.

Description

Technical field [0001] The present invention relates to a waveguide structure and an optical element that propagate surface plasmon waves. Background technique [0002] Conventionally, known in this technical field is, for example, a light collection mechanism using surface plasmon disclosed in Non-Patent Document 1. In the technique disclosed in Non-Patent Document 1, there is more than one opening, and a metal film whose surface changes periodically is provided on a Si mesa structure. Among the light incident on the metal film, only the wavelength component having a specific relationship with the period formed on the metal film is strengthened on the side of the Si mesa structure of the opening and is transmitted. This is because the light energy irradiated on the metal film deviated from the opening is concentrated in the opening through the propagation of surface plasma. [0003] In addition, as a technique in the above-mentioned technical field, as disclosed in Patent Docume...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B6/10G02B6/12
CPCG02B6/1226B82Y20/00
Inventor 藤原弘康山西正道樋口彰中嶋和利
Owner HAMAMATSU PHOTONICS KK
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