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Symmetrical straight beam structure condenser type micro-acceleration sensor and manufacturing method thereof

A technology of acceleration sensor and structural capacitance, which is used in the measurement of acceleration, velocity/acceleration/shock measurement, instruments, etc., can solve the problem of not being able to significantly reduce the cross-axis sensitivity and large lateral sensitivity of the device, so as to reduce the cross-sensitivity and simplify the process. , the effect of balancing thermal stress

Active Publication Date: 2007-09-19
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But usually the elastic beam of this structure is not in the same plane as the center of the sensitive mass block, which will cause a large lateral sensitivity, that is, the acceleration signal in the non-sensitive direction will also cause a large output, such as Kampen R.P.V., Wolffenbuttel R.F., Modeling the mechanical behavior of bulk-micromachined silicon ccelerometers, Sensors and Actuators, A64, 1998, 137-150. In order to reduce the lateral effect, the two silicon wafers were etched on one side of the quality block pattern and then silicon-silicon bonded. Erosion forms an intermediate mass with elastic beams on both sides, such as Henrion W.S., et.al, Sensors structure with L-shaped spring legs, US Patent No. 5,652,384, because its elastic beam is an L-shaped beam, the first order mode is Detection mode, the frequency of the second and third modes is about 3-4 times of the frequency of the first mode, which cannot significantly reduce the cross-axis sensitivity of the device

Method used

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  • Symmetrical straight beam structure condenser type micro-acceleration sensor and manufacturing method thereof
  • Symmetrical straight beam structure condenser type micro-acceleration sensor and manufacturing method thereof
  • Symmetrical straight beam structure condenser type micro-acceleration sensor and manufacturing method thereof

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Embodiment 1

[0044] Embodiment 1 of the present invention relates to a structure of a micro-acceleration sensor, which is described in conjunction with FIG. 1 .

[0045] As shown in Figure 1(a), one end of the straight elastic beam 1 is connected to the top corner of the central mass 2 through a short beam 4, and the other end is connected to the external support frame 3 perpendicular to it. As shown in Figure 1(b), the micro-acceleration sensor structure includes a centrally symmetrical mass block 2, an external support frame 3, and eight vertically symmetrical straight elastic beams connected to the centrally symmetrical mass block 2 and the external support frame 3 1 and upper cover plate 27, lower cover plate 28. The mass block 2 is composed of the top mass block silicon chip 6 and the bottom mass block silicon chip 7, the straight elastic beam structure 1 is composed of the top elastic beam 22 and the bottom elastic beam 21, and the external support frame 3 is composed of the top supp...

Embodiment 2

[0057] Embodiment 2 of the present invention relates to another micro-acceleration sensor structure, which differs from Embodiment 1 in that the distribution of the straight elastic beams and the position of the capacitance gap are different.

[0058] As shown in Fig. 3(a), one end of the straight elastic beam 1 is connected to any position 5 along the side length of the central mass 2 except the top corner through the short beam 4, and the other end is connected to the external support frame 3 perpendicular to it. As shown in Figure 3(b), the micro-acceleration sensor structure includes a centrally symmetrical mass block 2, an external support frame 3, eight up-and-down symmetrical straight elastic beam structures 1 connected between the mass block 2 and the external support frame 3, and the upper and lower Cover plate 27, lower cover plate 28. The centrosymmetric mass block 2 is composed of the top mass block silicon chip 6 and the bottom mass block silicon chip 7, the strai...

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Abstract

The present invention relates to a capacitance type micro-acceleration sensor with a symmetrical and straight-girder structure and a manufacturing method thereof. The characteristics reside in that said acceleration sensor consists of a centrosymmetric quality block, an external supporting frame, eight direct elastic girders which are up-down symmetrical for connecting the quality block and the external supporting frame, an upper cover board and a lower cover board. On end of each direct elastic girder is connected to the top or the lateral of the bottom of the quality block that is parallel with the elastic girder, while the other end is connected to inner surface of the external supporting frame vertical to the elastic girder. The capacitance type micro-acceleration sensor with a symmetrical and straight-girder structure can improve the sensitivity at the same time of reducing the transversal effect remarkably. The capacitance type micro-acceleration sensor with a symmetrical and straight-girder structure is made by using the technology of a micro-electronics mechanism system and is a micro-mechanism acceleration sensor with a high performance.

Description

technical field [0001] The invention relates to a capacitive micro-acceleration sensor with a symmetrical straight beam structure and a manufacturing method thereof, belonging to the field of micro-electromechanical systems. Background technique [0002] Acceleration sensors manufactured using micromechanical technology have the advantages of small size, light weight, low cost, high reliability, mass production, and easy integration with electronic circuits, and can be widely used in many fields such as aviation, aerospace, automobiles, robots, and oil exploration. , has a huge market application prospect. At present, the micromachined acceleration sensor has become the mainstream development direction. According to the sensitive principle, micro-mechanical acceleration sensors can be divided into capacitive, piezoresistive, piezoelectric, electromagnetic, thermal convection and resonant. Compared with the piezoresistive or piezoelectric type, the capacitive acceleration s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01P15/125
Inventor 车录锋徐玮鹤熊斌戈肖鸿王跃林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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