Organic electroluminescent device with hole transmitting regulating and controlling character
An electroluminescent device and hole transport technology, which is applied in the direction of electroluminescent light source, electric solid-state device, electric light source, etc., can solve the problems of high equipment and environment requirements, high device cost, time-consuming and other problems, and achieve good Carrier transport ability, excellent film-forming properties, and the effect of reducing production cost
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Embodiment 1
[0049] As shown in FIG. 2, the organic functional layer 3 in the device structure includes a hole transport layer 3-1, a light emitting layer and an electron transport layer 3-2-3.
[0050] The material of the hole transport layer of the device is PS:NPB, and the material of the light emitting layer and electron transport material is Alq 3 , The cathode layer is made of Mg:Ag alloy. The entire device structure is described as:
[0051] Glass substrate / ITO / PS:NPB(100nm) / Alq 3 (50nm) / Mg:Ag(200nm)
[0052] The preparation method is as follows:
[0053] ①Use detergent, ethanol solution and deionized water to ultrasonically clean the transparent conductive substrate ITO glass, and dry it with dry nitrogen after cleaning. Wherein the ITO film on the glass substrate is used as the anode layer of the device, the square resistance of the ITO film is 10O / , and the film thickness is 180nm.
[0054] ② Move the dried substrate into a vacuum chamber, and pretreat the ITO glass with low...
Embodiment 2
[0061] As shown in FIG. 2, the organic functional layer 3 in the structure of the device includes a hole transport layer 3-1, a light emitting layer and an electron transport layer 3-2-3.
[0062] The material of the hole transport layer of the device is PS:TPD, and the material of the light emitting layer and the electron transport layer is Alq 3 , The cathode layer is made of Mg:Ag alloy. The entire device structure is described as:
[0063] Glass substrate / ITO / PS:TPD(100nm) / Alq 3 The preparation process of the (50nm) / Mg:Ag(100nm) device is similar to that of Example 1.
Embodiment 3
[0065] As shown in FIG. 3 , the organic functional layer 3 in the structure of the device includes a hole transport layer 3 - 1 , a light emitting layer 3 - 2 , and an electron transport layer 3 - 3 .
[0066] The hole transport layer material of the device is PC:TPD, the light emitting layer material is ruberene, and the electron transport material is Bepp 2 , The cathode layer is made of Mg:Ag alloy. The entire device structure is described as:
[0067] Glass substrate / ITO / PC:TPD(100nm) / ruberene(50nm) / Bepp 2 (15nm) / Mg:Ag(100nm)
[0068] The fabrication process of the device is similar to that of Example 1.
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