Method for forming copper layer and copper mosaic structure

Abstract

The invention discloses a copper layer formation method, including the following steps: providing a substrate which is provided with a copper inoculating crystal layer on the surface; transferring thesubstrate into copper electroplating equipment; introducing protecting gas into the annealing device of the copper electroplating equipment and processing a first annealing treatment to the substrate; electroplating copper on the substrate through the electroplating device of the electroplating equipment; processing fringe washing treatment to the substrate through the fringe washing device of the electroplating equipment; and processing a second annealing treatment to the substrate through the annealing device of the copper electroplating equipment. In this way, the process of electroplatingthe copper can be finished. The invention further discloses a corresponding copper mosaic structure formation method. The copper mosaic structure formation method can effectively reduce the number ofthe pores in the copper layer, thus improving the quality of the copper layer or the copper mosaic structure.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a copper layer and a copper inlaid structure. Background technique [0002] As the production of integrated circuits develops towards ultra-large-scale integrated circuits (ULSI), the internal circuit density is increasing, and the number of components contained is increasing, so that the surface of the wafer cannot provide enough area to make the required interconnection lines. (Interconnect). In order to meet the increased demand for interconnection lines after the shrinkage of components, the design of multilayer metal interconnection lines with more than two layers realized by using through holes has become a method that must be adopted in VLSI technology. [0003] The traditional metal interconnection is made of aluminum metal, but with the continuous shrinking of the device feature size in the integrated circuit chip, the current de...

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Problems solved by technology

[0011] The invention provides a method for forming a copper layer and a copper inlaid structure, so as to improve the problem that pores easily appear in the copper layer or the copper inlaid structure in the existing forming method

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