Manufacturing method of tunable semiconductor laser and tunable semiconductor laser

Abstract

Provided is a making method of a tunable semiconductor laser and a tunable semiconductor laser, wherein the making method comprises the following procedures: growing lower waveguide layer, multiple quantum trap structure, upper waveguide layer and indium phosphide layer epitaxially and sequentially on the n type substrate; growing earth silicon dielectric membrane on the epitaxial layer; dividing into active waveguide region and raster region; butting passive waveguide portion; removing earth silicon dielectric membrane and indium phosphide layer on the surface of the active waveguide region; growing ridge waveguide indium phosphide material and low resistivity InGaAs ternary layer sequentially; growing earth silicon dielectric membrane; making raster graphic of the ridge waveguide and the ridge waveguide on the raster region; etching raster of the ridge waveguide and the ridge waveguide on the raster region; growing earth silicon dielectric membrane continuously; opening the window separately on active waveguide region and raster region in order to make electrode isolation ditch; making P face and N face electrode of laser. The product of the invention has good product property and high automation degree of the product making, which simplifies the technology process and has good product ratio.

Description

technical field [0001] The present invention relates to a semiconductor laser for communication. In particular, it relates to a method for manufacturing a tunable semiconductor laser with distributed Bragg reflection and sampling grating distributed Bragg reflection with high performance and high degree of automation, and a tunable semiconductor laser thereof. Background technique [0002] At present, there are many technologies for tunable lasers, mainly vertical cavity surface emitting laser (VCSEL), external cavity tuning technology, distributed feedback Bragg laser (DFB) array technology, distributed Bragg reflection laser (DBR) and sampling grating distributed Bragg reflection Laser (SGDBR) technology, etc. Among them, the output power of VCSEL is low, and due to the limitation of material properties, it is difficult to develop in the long wavelength range (1310 to 1550 nm); the external cavity tuning wavelength conversion speed is slow, and the wavelength is tuned by ...

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Problems solved by technology

Würzburg University and Max Planck Research Center in Germany reported DFB lasers for making vertical gratings in IEEE PHOTONICS TECHNOLOGY LETTERS, VOL.19, NO.5, P.264 in 2007, but they used dotted line quantum well technology, which is different from current practical lasers. Production techniques vary widely

And the grating is etched through the active area, and the lateral damage caused by the etching will also affect the performance of the laser

At present, vertical gratings are still only used in DFB lasers, and there are no related reports on DBR and SGDBR lasers.

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