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MRAM memories utilizing magnetic write lines

A magnetic memory and magnetic technology, applied in the direction of static memory, read-only memory, information storage, etc., can solve the problems that electromigration has not been overcome, and achieve the effects of improving the reliability of resistance to electromigration, easy manufacturing, and improving efficiency

Inactive Publication Date: 2009-08-05
APPLIED SPINE TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the other problems mentioned above, such as electromigration, are still not overcome

Method used

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  • MRAM memories utilizing magnetic write lines
  • MRAM memories utilizing magnetic write lines
  • MRAM memories utilizing magnetic write lines

Examples

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Embodiment Construction

[0030] The present invention relates to an improvement in magnetic storage. The following description is introduced to enable those of ordinary skill in the art to make and use the present invention, and the description is provided between the context of the patent application and its requirements. Various modifications to the preferred embodiment are obvious to those of ordinary skill in the art, and the general principles here can be applied to other embodiments. Therefore, it is not intended to limit the present invention to the illustrated embodiment, but to make the present invention consistent with the widest scope consistent with the principles and features described herein.

[0031] The invention discloses a method and system for providing and using a magnetic random access memory. The method and system include providing a plurality of magnetic memory cells, a first set of multiple write lines, and a second set of multiple write lines. The first plurality of write lines ar...

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Abstract

The present invention discloses a method and system for providing and using a magnetic random access memory. The method and system include providing a plurality of magnetic memory cells, a first plurality of write lines, and a second plurality of write lines. The first plurality of write lines is a plurality of magnetic write lines. At least one of the plurality of magnetic lines and at least one of the second plurality of write lines each carry current for writing at least one of the plurality of magnetic memory cells. Preferably, the plurality of magnetic write lines have soft magnetic properties, and are preferably magnetic bit lines. For a magnetic tunnel junction stack in a magnetic memory cell, the magnetic bit line is preferably substantially thicker than and closely spaced from the free layer of the magnetic memory cell.

Description

[0001] Cross reference to related applications [0002] This application claims priority under 35 USC 119(e) for the provisional patent application serial number 60 / 431,741 filed on December 9, 2002. [0003] This application is related to the pending U.S. Patent Application No. 60 / 444,881 (2817P) entitled "HIGH DENSITY AND HIGH PROGRAMMINGEFFICIENCY MRAM DESIGN", filed on February 5, 2003 and assigned to the assignee of this application. This application and the title "MRAM ARCHITECTURE AND A MAETHOD AND SYSTEM FOR FABRICATING MRAM MEMORIES UTILIZING THEARCHITECTURE" June 26, 2003 The pending U.S. patent application filed and assigned to the assignee of this application 10 / 606,557 Number (2818P) is related. This application and the title "MRAM ARRAY WITH MAGNETIC WRITE LINES", in 2003 August 21 The pending U.S. patent application filed and assigned to the assignee of this application 10 / 646,455 Number (2780P) related. Technical field [0004] The present invention relates to a ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C17/02
Inventor 臧大化
Owner APPLIED SPINE TECH
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