Semiconductor device and its making method

Abstract

The invention discloses a semiconductor device and method, the semiconductor device includes: base plate, sensor chip which is connected with the base plate, weld line which can electric connected with sensor chip, insulated layer which covers the base plate, adhesion layer which is set on the insulated layer and transparent cover which is on the adhesion layer and covers the sensor chip. The semiconductor device and method of the invention can provide an image sensor capsulation with frivolity shortness property, at the time of increasing configuration intensity of the dam; it does not decrease the adhesion with later photic region, it forms perfect adhesion between dam structure and photic region, and without leakage problem, it also can avoid the problem of weld line damnification and rupture, at the same time the sensing area of the sensing chip will not be polluted when forming dam structure.

Description

technical field [0001] The present invention relates to a semiconductor device and its manufacturing method, in particular to a sensor semiconductor device and its manufacturing method. Background technique [0002] The traditional image sensor package (Image sensor package) is mainly to connect the sensor chip (Sensor chip) on a chip carrier, and after electrically connecting the sensor chip and the chip carrier through bonding wires, the A glass is covered above the sensing chip, and the image light can be received by the sensing chip. In this way, the completed image sensor package can be used by the system factory for integration on external devices such as printed circuit boards (PCBs) for digital cameras (DSC), digital video cameras (DV), optical mice, mobile devices, etc. Applications of various electronic products such as telephones and fingerprint readers. [0003] see figure 1 , U.S. Patent No. 6,060,340 proposes a sensing package, which is to place a pre-prepar...

AI Technical Summary

Problems solved by technology

[0010] In the above-mentioned prior art, the dam structure formed by the colloid laid on the welding wire needs to be responsible for the retaining wall and the glue at the same time, for the subsequent direct fixation of the light-transmitting layer on it, so the colloid must have a certain rigidity on the one hand. To form the required dam structure, it is usually necessary to add fillers to the colloid to strengthen the structural strength, which will reduce the adhesion between the colloid and the light-transmitting layer. On the other hand, if you want to increase the colloid and the light-transmitting layer Adhesiveness, that is, it is necessary to reduce the amount of filler in the colloid, but in this way, it may not be possible to form a rigid dam structure, resulting in leakage of the light-transmitting layer and affecting product reliability

[0011] Furthermore, when the light-transmitting layer is fixed on the colloid covering the welding wire, it is necessary to press the light-transmitting layer on the colloid before the colloid is not fully cured. In this way, when pressing, because the colloid has not yet Complete curing may cause pressure loss or even breakage of the welding wire

[0012] In addition, in the above-mentioned prior art, when laying the colloid, because the colloid is a coated wire and its height is greater than the thickness of the sensor chip, the problem that the colloid overflows to the active surface of the sensor chip often occurs, resulting in Problems such as pollution of the sensing area on the active surface of the sensor chip, resulting in waste products

[0013] Therefore, how to provide a sensing semiconductor device and its manufacturing method, which has a strong dam structure and does not reduce the adhesion with the light-transmitting layer, can avoid problems such as leakage and poor reliability, and will not cause welding lines The pressure loss and the contamination of the sensing area of ​​the sensor chip are indeed issues that need to be faced urgently in related fields.

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