Method for improving voltage distribution of component threshold value

A threshold voltage distribution and device technology, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of threshold voltage distribution device characteristic drift, poor device stability, etc., to reduce LDD atomic diffusion, reduce leakage current, Effect of Uniform Threshold Voltage Distribution

Active Publication Date: 2008-12-10
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology

Uneven threshold voltage distribution can easily lead to device characteristic drift caused by process fluctuations, and the stability of the device is poor

Method used

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  • Method for improving voltage distribution of component threshold value
  • Method for improving voltage distribution of component threshold value
  • Method for improving voltage distribution of component threshold value

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Embodiment Construction

[0013] Such as figure 2 Shown, a kind of method step of improving device threshold voltage distribution of the present invention is: at first, carry out core NMOS halo ion implantation and LDD ion implantation; Second step, I / O NMOS LDD ion implantation; The 3rd step, LDD rapid heating Annealing, the temperature of the rapid thermal annealing is 950° C.; the fourth step, core PMOS halo ion implantation and LDD ion implantation; the fifth step, I / O PMOS LDD ion implantation. The conditions of the LDD rapid thermal annealing in the third step may be that the temperature is 950° C. and the rapid thermal annealing time is 10 seconds.

[0014] The invention discloses a method for improving the threshold voltage distribution of devices, which adopts low-temperature rapid thermal annealing after I / O NMOS LDD ion implantation to eliminate lattice defects, eliminate interstitial atoms and vacancies, and reduce boron and phosphorus atoms caused by lattice defects The enhanced diffusio...

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Abstract

The invention discloses a method for improving the threshold voltage distribution of a device, comprising the following steps: the first step, core NMOS halo ion implantation and LDD ion implantation; the second step, I / O NMOS LDD ion implantation; the third step, LDD fast Thermal annealing, the temperature of the rapid thermal annealing is 950° C.; the fourth step, core PMOS halo ion implantation and LDD ion implantation; the fifth step, I / O PMOS LDD ion implantation. The method of the invention can greatly reduce the fluctuation of the NMOS threshold voltage with the length of the channel, thereby increasing the process window and improving the characteristics of the device. The invention is applicable to the NMOS device manufacturing process in the semiconductor manufacturing process.

Description

technical field [0001] The invention relates to a semiconductor device and a semiconductor manufacturing process, in particular to a method for improving device threshold voltage distribution in NMOS device manufacturing. Background technique [0002] Short Channel Effect (SCE) and Reverse Short Channel Effect (RSCE) are two important effects that exist in NMOS devices at the same time, and they will cause the threshold voltage of NMOS devices There is a large fluctuation with the change of the channel length. RSCE causes the threshold voltage of NMOS devices to increase with the decrease of the channel length within a certain channel length range, and SCE causes the short channel threshold voltage to decrease. The uneven distribution of the threshold voltage will easily lead to device characteristic drift caused by process fluctuations, and the stability of the device is poor. Especially for input / output (input / output, hereinafter referred to as I / O) NMOS devices, because...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336
Inventor 钱文生
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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