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Solid camera device, driving method thereof and camera

A technology for solid-state photography and motion, applied in the field of cameras and solid-state photography devices, can solve problems such as long-term and achieve the effect of not sacrificing sensitivity

Inactive Publication Date: 2008-06-11
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

On the other hand, it takes a relatively long time to read all the signals of a solid-state imaging device with many pixels, and it is impossible to output signals at the frame rate of a normal TV signal required for a monitor.

Method used

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  • Solid camera device, driving method thereof and camera
  • Solid camera device, driving method thereof and camera
  • Solid camera device, driving method thereof and camera

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0140] In Embodiment 1, a CCD (charge-coupled device) sensor of a progressive scanning method will be described as a solid-state imaging device.

[0141] FIG. 1 is an explanatory diagram showing a configuration example of a CCD sensor 10 according to Embodiment 1 of the present invention. The CCD sensor 10 of FIG. 1 has a pixel section 11 , a horizontal transfer section 12 , a charge detection section 13 , a vertical transfer section (not shown in FIG. 1 ), and a control section 18 . In addition, this CCD sensor 10 employs a simultaneous independent readout method for all pixels.

[0142] The pixel portion 11 has an effective pixel area 11A, a transient area 11B, a shadow area 11C, and vertical empty areas 11D and 11E. The effective pixel area 11A has 1280 (horizontal)×960 (vertical) photodiodes as photoelectric change elements arranged in a matrix. One photodiode constitutes one pixel. Here, the array of pixels in the horizontal direction is called a row, and the array of ...

Embodiment approach 2

[0216] In Embodiment 2, a CCD sensor of an interlaced scanning method will be described as a solid-state imaging device.

[0217] FIG. 17 is an explanatory diagram showing a configuration example of a CCD sensor 30 according to Embodiment 2 of the present invention. The CCD sensor 30 of FIG. 17 has a pixel section 31 , a horizontal transfer section 32 , a charge detection section 33 , a vertical transfer section (not shown in FIG. 17 ), and a control section 38 .

[0218] The pixel section 31 has an effective pixel area 31A, a momentary area 31B, a shadow area 31C, and vertical empty areas 31D and 31E. The effective pixel area 31A has 1280 (horizontal)×960 (vertical) photodiodes as photoelectric conversion elements arranged in a matrix. One photodiode constitutes one pixel. The respective regions 31A to 31E of the pixel unit 31 have the same arrangement as the respective regions 11A to 11E of the pixel unit 11 of the CCD sensor 10 in FIG. 1 , and have the same number of pixe...

Embodiment approach 3

[0258] In Embodiment 3, a MOS (metal oxide semiconductor) sensor, particularly a CMOS (complementary MOS) sensor will be described as a solid-state imaging device.

[0259] FIG. 27 is a block diagram showing a configuration example of a CMOS sensor 50 according to Embodiment 3 of the present invention. The CMOS sensor 50 of FIG. 27 has a pixel address specifying circuit 312, a control unit 314, a synchronous signal generator 316, a timing generator 318, a vertical register (row address selection unit) 322, a latch array 324, a horizontal register (column address selection unit) part) 326, a sense amplifier 328 and a pixel part 340.

[0260] The pixel unit 340 has an empty area 342 , an effective pixel area 344 , a light and shadow area 346 , and an empty transfer area 348 . The effective pixel area 344 has 1280 (horizontal)×960 (vertical) photodiodes as photoelectric conversion elements arranged in a matrix. One photodiode constitutes one pixel.

[0261] Figure 28 It is a...

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Abstract

The solid-state image pickup device of the invention includes: a plurality of optoelectronic transducers arranged in an array; a plurality of vertical transfer sections each for reading charges from optoelectronic transducers and vertically transferring the read charges; a horizontal transfer section; a charge detection section for converting the horizontally transferred charges to signal voltages and the like; and a control section. The control section outputs signals so as to obtain either a signal corresponding to the sum of charges from an optoelectronic transducer belonging to one column and belonging to one of alternately selected rows and an optoelectronic transducer belonging to a column adjacent to the one column and belonging to a row other than the alternately selected rows, or a signal corresponding to the sum of charges from optoelectronic transducers belonging to a same column, every predetermined even number of continuous rows of optoelectronic transducers.

Description

technical field [0001] The present invention relates to a solid-state imaging device and a camera using the solid-state imaging device. Background technique [0002] Cameras using solid-state imaging devices such as CCDs (charge-coupled devices) (hereinafter, cameras refer to cameras using solid-state imaging devices) have increased demand for higher image quality and higher functionality, and multi-pixels have been achieved. Big progress. In addition, most recent cameras have a monitor such as a liquid crystal display for monitoring an object to be photographed. [0003] In order to reliably monitor a photographic subject, the frame rate cannot be made too small. In addition, liquid crystal televisions are often used as monitors, and in this case, the same signals as those of ordinary televisions must be provided. On the other hand, it takes a relatively long time to read all the signals of a solid-state imaging device having many pixels, and it is impossible to output s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H04N5/335H01L27/14H04N3/15H04N9/04
CPCH04N3/155H04N9/045H04N25/42H04N25/441H04N25/46H04N25/73H04N25/76
Inventor 今村邦博藤井俊哉田代信一
Owner PANASONIC CORP
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