Method of depositing dielectric film having Si-N bonds by modified peald method

Abstract

A method of forming dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; introducing a hydrogen-containing silicon precursor in pulses of less than 1.0-second duration into the reaction space wherein the reactive gas and the rare gas are introduced; exiting a plasma in pulses of less than 1.0-second duration immediately after the silicon precursor is shut off; and maintaining the reactive gas and the rare gas as a purge of less than 2.0-second duration.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application claims the benefit of U.S. Provisional Application No. 61 / 251,526, filed Oct. 14, 2009, the disclosure of which is herein incorporated by reference in its entirety.BACKGROUND[0002]1. Field of the Invention[0003]The present invention relates to semiconductor integrated circuit manufacturing and, more particularly to a method of depositing the silicon nitride films using modified plasma enhanced atomic layer deposition (PEALD) at low temperatures (under 600° C., particularly under 400° C.).[0004]2. Description of the Related Art[0005]Silicon nitride layers deposited at low temperatures (under 600° C., particularly under 400° C.) have been used in a number of important applications for memory devices, for example, as a passivation layer, a surface protection layer, and / or a spacer for a transistor gate. Silicon nitride films may be formed by plasma enhanced chemical vapor deposition (PECVD) methods. The main advantages of th...

AI Technical Summary

Benefits of technology

[0007]Embodiments of the present invention provide a method of forming silicon nitride thin films using modified plasma enhanced atomic layer deposition (PEALD) at low temperatures (under 600° C., particularly under 400° C.) at high deposition rates with high conformality (e.g., at least 90%). Furthermore, the present invention provides a method for modifying etch properties (such as etching rate) of the deposited layers by adding a second precursor while maintaining a high deposition rate and high conformality.

[0008]Accordingly, in an aspect, an object of at least one embodiment of the present invention is to provide a method of forming a highly conformal (e.g., at least 90%, in some embodiments, no less than 95%) dielectric layer having Si—N bonds, such as a layer of silicon nitride, on surfaces of trenches for an integrated circuit at low temperatures (e.g., <400° C.), and as explained below, one or more of the disclosed embodiments effectively accomplish at least the object.

[0011]In another aspect, an object of at least one embodiment of the present invention is to provide a method for modifying etch properties of a dielectric layer having Si—N bonds, such as a layer of silicon nitride, which has a high conformal (step coverage 90% or higher, in some embodiments, no less than 95%) layer on surfaces of trenches for an integrated circuit at low temperatures (e.g., <600° C.), and as explained below, one or more of the disclosed embodiments effectively accomplish at least the object.

Problems solved by technology

However, the PECVD methods for forming silicon nitride lead to poor conformality or poor step coverage on a substrate containing small features.

In a small circuits and devises such as ultra-large scale integrated (ULSI) circuitries, such poor conformal coverage hampers the development of higher density circuit devices and elements.

However, the ALD or PEALD methods for forming silicon nitride lead to extremely poor deposition rates.

Such poor deposition rates hamper lowering the manufacturing cost for development of higher density circuit devices and elements.