Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Chemical Mechanical Polishing Pad

Inactive Publication Date: 2007-09-27
BAJAJ RAJEEV
View PDF38 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Another aspect of existing polishing pads is that they have no ability to modulate the removal profile across the width of a wafer.
In cases of critical process modules, such as copper and STI polishing, this can lead to over-polishing to complete processing across the width of the wafer.
This leads to loss of performance or, worse, loss of yield for some parts.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chemical Mechanical Polishing Pad
  • Chemical Mechanical Polishing Pad

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016]Described herein is a CMP polishing pad which allows for establishing a predefined, non-planar material removal profile. In one embodiment, the pad includes polishing elements, which are placed on an underlying compressible foam and protrude through holes in a guide plate overlaid on that foam. The nominal size of each polishing element is 0.25 inches and the height thereof is 0.160 inches. The compressible foam is nominally 0.060″ thick.

[0017]Note that although the present polishing pad is discussed with reference to certain illustrated embodiments, the scope of the present invention is not intended to be limited thereby. Instead, the present invention should only be measured in terms of the claims, which follow this description.

[0018]The present pad design enables the application very uniform pressure onto a wafer and eliminates (or at least substantially reduces) edge effect typically associated with full sheet polishing pads. This translates to a very uniform material remo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A polishing pad has polishing elements of at least two different types of materials, each having a different coefficient of friction, and arranged over a surface of the pad so as to provide a non-planar material removal profile for the pad. The polishing elements may be arranged to provide different material removal profiles, such as an edge-fast, edge-slow, center-fast or center-slow material removal profile.

Description

RELATED APPLICATIONS[0001]The present application is a nonprovisional of, claims priority to an incorporates by reference U.S. provisional patent application No. 60 / 784,263, filed 21 Mar. 2006.FIELD OF THE INVENTION[0002]The present invention relates to the field of chemical mechanical planarization (CMP) and relates specifically to a CMP polishing pad conditioning apparatus and its method of use.BACKGROUND[0003]In modem integrated circuit (IC) fabrication, layers of material are applied to embedded structures previously formed on semiconductor wafers. Chemical mechanical planarization (CMP) is an abrasive process used to remove these layers and polish the surface of a wafer to achieve the desired structure. CMP may be performed on both oxides and metals and generally involves the use of chemical slurries applied in conjunction with a polishing pad in motion relative to the wafer (e.g., pad rotation relative to the wafer). The resulting smooth flat surface is necessary to maintain t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B24D11/00
CPCB24D11/04B24D7/14
Inventor BAJAJ, RAJEEV
Owner BAJAJ RAJEEV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com