Iridium oxide nanostructure patterning

Abstract

A method is provided for patterning iridium oxide (IrOx) nanostructures. The method comprises: forming a substrate first region adjacent a second region; growing IrOx nanostructures from a continuous IrOx film overlying the first region; simultaneously growing IrOx nanostructures from a non-continuous IrOx film overlying the second region; selectively etching areas of the second region exposed by the non-continuous IrOx film; and, lifting off the IrOx nanostructures overlying the second region. Typically, the first region is formed from a first material and the second region from a second material, different than the first material. For example, the first material can be a refractory metal, or refractory metal oxide. The second material can be SiOx. The step of selectively etching areas of the second region exposed by the non-continuous IrOx film includes exposing the substrate to an etchant that is more reactive with the second material than the IrOx.

Description

RELATED APPLICATIONS [0001] This application is a continuation-in-part of a pending patent application entitled, IRIDIUM OXIDE NANOTUBES AND METHOD FOR FORMING SAME, invented by Zhang et al., Ser. No. 10 / 971,280, filed Oct. 21, 2004. [0002] This application is a continuation-in-part of a pending patent application entitled, IRIDIUM OXIDE NANOWIRE AND METHOD FOR FORMING SAME, invented by Zhang et al., Ser. No. 10 / 971,330, filed Oct. 21, 2004. [0003] Both the above-mentioned applications are incorporated herein by reference.BACKGROUND OF THE INVENTION [0004] 1. Field of the Invention [0005] This invention generally relates to integrated circuit (IC) fabrication and, more particularly, to patterned iridium oxide nanostructures and an associated fabrication process. [0006] 2. Description of the Related Art [0007] Recently, the fabrication of nanostructures has been explored, due to its potential importance as a building block in nano, microelectromechanical (MEM), and nanoelectromechani...

AI Technical Summary

Benefits of technology

This patent describes a method for making practical iridium oxide nanotip structures that can be integrated into electronic devices. The method involves patterning the growth of iridium oxide nanostructures on a substrate using a continuous or non-continuous film of iridium oxide. The non-continuous film is selectively etched and lifted off, leaving behind a patterned substrate with nanostructures. The method can be used to create complex nanotip structures that can be used in electronic devices such as CMOS, IC, and LCD displays.

Problems solved by technology

No processes had been previously reported that are able to form metallic nanowires without the use of porous material forms or templates.

The templates add a considerable degree of complexity to the process.

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