Substrate processing method and substrate processing apparatus

A substrate processing method and a substrate processing device technology, which are applied in the direction of gaseous chemical plating, coating, electrical components, etc., can solve problems such as difficult correction of heating conditions, achieve the elimination of uneven film thickness, realize product quality, and improve reproduction sexual effect

Inactive Publication Date: 2007-05-23
TOKYO ELECTRON LTD
View PDF2 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, with prior art methods, correction of heating conditions that add uniformity of processing temperature within the wafer plane is difficult

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Substrate processing method and substrate processing apparatus
  • Substrate processing method and substrate processing apparatus
  • Substrate processing method and substrate processing apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0042] Next, preferred embodiments of the present invention will be described with reference to the drawings. FIG. 4 is a schematic configuration diagram showing a multi-chamber film-forming system for implementing a TiN film-forming method as an applicable example of the substrate processing method of the present invention.

[0043]As shown in FIG. 4, the film forming system 100 includes: two Ti film forming devices 1, 2 for forming a Ti film on a wafer W by CVD, and two TiN film forming devices 3, 4 for forming a TiN film by CVD A total of four film-forming devices. These film forming devices 1 , 2 , 3 , and 4 are arranged correspondingly on four sides of the hexagonal transfer chamber 5 , respectively. Furthermore, load lock chambers 6 and 7 are provided on the other two sides of the wafer transfer chamber 5, respectively. On the side opposite to the wafer transfer chamber 5 of these load lock chambers 6 and 7 , a wafer loading / unloading chamber 8 is provided. On the opp...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

Disclosed is a substrate processing method wherein the infrared absorptance or infrared transmittance of a substrate to be processed is measured in advance, and the substrate is processed according to the measured value while independently controlling temperatures at least in a first region located in the central part of the substrate and in a second region around the first region using temperature control means which are respectively provided for the first region and the second region and can be controlled independently from each other.

Description

technical field [0001] The present invention relates to a substrate processing method and a substrate processing device, in particular to a substrate processing method and a substrate processing device for performing film formation and other processing on a substrate to be processed such as a semiconductor wafer. Background technique [0002] In the film-forming process performed in the manufacturing process of various semiconductor devices, the temperature at the time of film-forming is very important in ensuring the characteristics of the film and the accuracy of the film thickness. If there is a problem with the temperature control during film-forming, it will lead to The quality and reliability of semiconductor devices degrade. [0003] In a film forming apparatus that forms a film on a semiconductor wafer (hereinafter sometimes simply referred to as a "wafer") as a substrate to be processed by a method such as CVD, for example, AlN or the like having excellent thermal c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/46H01L21/285H01L21/02
CPCC23C16/46H01L21/67248C23C16/52H01L22/10H01L21/02
Inventor 多田国弘宫下大幸军司勲男
Owner TOKYO ELECTRON LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap