Substrate processing method and substrate processing apparatus

Abstract

Disclosed is a substrate processing method wherein the infrared absorptance or infrared transmittance of a substrate to be processed is measured in advance, and the substrate is processed according to the measured value while independently controlling temperatures at least in a first region located in the central part of the substrate and in a second region around the first region using temperature control means which are respectively provided for the first region and the second region and can be controlled independently from each other.

Description

technical field [0001] The present invention relates to a substrate processing method and a substrate processing device, in particular to a substrate processing method and a substrate processing device for performing film formation and other processing on a substrate to be processed such as a semiconductor wafer. Background technique [0002] In the film-forming process performed in the manufacturing process of various semiconductor devices, the temperature at the time of film-forming is very important in ensuring the characteristics of the film and the accuracy of the film thickness. If there is a problem with the temperature control during film-forming, it will lead to The quality and reliability of semiconductor devices degrade. [0003] In a film forming apparatus that forms a film on a semiconductor wafer (hereinafter sometimes simply referred to as a "wafer") as a substrate to be processed by a method such as CVD, for example, AlN or the like having excellent thermal c...

AI Technical Summary

Problems solved by technology

However, with prior art methods, correction of heating conditions that add uniformity of processing temperature within the wafer plane is difficult

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