System and method for controlling the isodiametric growth of crystal

Abstract

The related control system for crystal equal-diameter growth comprises: a crystal growing furnace, a crystal diameter detection part, a control part for crucible temperature, a control part for crystal tension speed to real-time gather crystal tension speed signal and feedback to regulate the speed by algorithm of Fuzzy control and PID control, and a common controller to receive all former signal. this invention improves control precision greatly as well as the one-draw yield.

Description

technical field [0001] The invention relates to a control system and method for equal diameter growth of crystal, in particular to a control system and method for equal diameter growth of single crystal silicon. Background technique [0002] Semiconductor materials are the basic materials of the semiconductor industry. Today, more than 95% of semiconductor devices are made of silicon materials, and more than 99% of integrated circuits are silicon integrated circuits. The raw material required for the production of integrated circuits is single crystal silicon. In recent years, the world has intensified the development of solar energy, an environmentally friendly energy source, and the solar power station that converts solar energy into civil electric energy is rapidly emerging as an industry. The demand has also doubled, but there are only a handful of domestic manufacturers capable of producing monocrystalline silicon, and the production capacity is insufficient, which is f...

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Problems solved by technology

Obviously, this application only takes the temperature of the melt as the control object, but does not organically combine the temperature control of the melt with the control of the ingot pulling speed, and at the same time, the dynamic performance of the PID treatment is poor, so the control of the crystal diameter growth in this application is relatively limited

[0007] Usually, those skilled in the art only consider the method of PID control to control the pulling speed control and the melt temperature in the process of crystal growth, which makes it difficult for the existing crystal growth control system and its method to further improve crystal growth. The control accuracy of the diameter during the growth process makes it difficult to achieve the expected production goal of equal-diameter crystal growth

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