Thin film transistor and manufacturing method thereof

A technology of thin-film transistors and manufacturing methods, which is applied in the direction of transistors, semiconductor/solid-state device manufacturing, electrical components, etc., and can solve problems such as light leakage

Inactive Publication Date: 2006-09-06
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Especially when the thin film transistor 10 is turned off and there is no current conduction between the source electrode 17 and the drain electrode 18, a photocurrent is easily generated between the source electrode 17 and the drain electrode 18 after part of the amorphous silicon channel layer 14 is irradiated with light, And there is the disadvantage of light leakage

Method used

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  • Thin film transistor and manufacturing method thereof
  • Thin film transistor and manufacturing method thereof
  • Thin film transistor and manufacturing method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0059] Please refer to figure 2 , which is a cross-sectional view showing the structure of the thin film transistor according to Embodiment 1 of the present invention. exist figure 2 Among them, the thin film transistor 20 includes a gate 22 , an insulating layer 23 , a channel layer 24 , an etch stop layer 25 , an ohmic contact layer 26 , a source 27 and a drain 28 . The gate 22 is disposed on a substrate 21 . The insulating layer 23 is disposed on the substrate 21 and covers the gate 22 . The channel layer 24 is disposed on a part of the insulating layer 23 and corresponds to the gate 22 , and the width of the channel layer 24 is less than or equal to the width of the gate 22 . The etch stop layer 25 is disposed on a portion of the channel layer 24 and corresponds to the gate 22 , and the width of the etch stop layer 25 is smaller than that of the channel layer 24 . The ohmic contact layer 26 is disposed on a portion of the insulating layer 23 and covers two ends of th...

Embodiment 2

[0064] Please refer to image 3 , which is a cross-sectional view showing the structure of the thin film transistor according to the second embodiment of the present invention. The difference between the thin film transistor 30 of the present embodiment and the thin film transistor 20 of the first embodiment lies in the ohmic contact layer 36 , and the remaining same constituent elements continue to use reference numerals, and the connection relationship between them will not be repeated.

[0065] exist image 3 Among them, the ohmic contact layer 36 includes a first sub-ohmic contact (first sub-ohmic contact) layer 36a and a second sub-ohmic contact (second sub-ohmic contact) layer 36b, and the second sub-ohmic contact layer 36b covers the etch stop layer 25, two ends of the channel layer 24 and part of the insulating layer 23. The first ohmic contact layer 36a covers the second ohmic contact layer 36b, and the source 27 and the drain 28 cover the first ohmic contact layer ...

Embodiment 3

[0068] Please also refer to Figure 4~5L , Figure 4 A flowchart showing a method for manufacturing a thin film transistor according to Embodiment 3 of the present invention, Figure 5A-5L Shown is a process cross-sectional view of a thin film transistor according to Embodiment 3 of the present invention. Please also refer to Figure 2~3 ,exist Figure 4 In step 41, a gate 22 is formed on a substrate 21 first. Such as Figure 5A As shown, the gate 22 covers part of the substrate 21, and the gate 22 includes metal, metal alloy or a combination thereof, and may be a single-layer or multi-layer structure. The substrate 21 includes an insulating substrate, a glass substrate, a ceramic substrate, a plastic substrate or a flexible substrate.

[0069] Next, enter step 42 , form an insulating layer 23 on the substrate 21 and cover the gate 22 . As shown in FIG. 5B , the insulating layer 23 covers the gate 22 and part of the substrate 21 , and the insulating layer 23 includes si...

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Abstract

A thin film transistor includes a gate, an insulating layer, a channel layer, etching stop layer, an ohmic contact layer, a source and a drain. It contains said gate set on a substrate, insulating layer set on substrate and covering gate, channel layer set on partial insulating layer and corresponding gate, channel layer width less than or equal to less than or equal to gate width, etching stop layer set on partial channel layer and corresponding gate, etching stop layer width less than channel layer width, layer set on partial insulating layer and covering etching stop layer two ends channel layer two ends, source and drain set on ohmic contact layer for electrically connected with two ends through ohmic contact layer.

Description

technical field [0001] The invention relates to a thin film transistor and a manufacturing method thereof, in particular to a thin film transistor in which the range of the channel layer is narrowed to the range of the gate and the manufacturing method thereof. Background technique [0002] Active matrix thin film transistor liquid crystal displays (Active matrix TFT-LCD, AMLCD) have been gradually replacing traditional cathode ray tube (cathode ray tube, CRT) displays due to their advantages such as lightness and thinness. The size and display quality requirements of AM LCD are also increasing day by day. With the improvement of the resolution of the liquid crystal display, the number of scanning lines also increases accordingly. Under the same frame time, the time for each scan line to be selected is also shortened, so the requirements for the switching characteristics of the thin film transistor (TFT) in each pixel are more demanding. Be stricter. As for the structure o...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L29/786
Inventor 梁中瑜张鼎张刘柏村王敏全陈信立甘丰源
Owner AU OPTRONICS CORP
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