Method for making double layer grid dielectric layer
A dielectric layer and double-layer gate technology, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc.
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[0019] Please refer to Figure 5 to Figure 10 . Figure 5 to Figure 10 A schematic diagram of a method for fabricating a double-layer gate dielectric layer according to a preferred embodiment of the present invention. Such as Figure 5 As shown, first a semiconductor substrate 50 is provided, such as a silicon substrate, and a silicon dioxide film 52 is formed on the surface of the semiconductor substrate 50, wherein in this embodiment, the silicon dioxide film 52 utilizes a chemical vapor deposition process, and silicon dioxide The thickness of the film is between 5-80 angstrom, and the process temperature of the chemical vapor deposition process is kept below 400° C. to maintain a good interface between the silicon dioxide film 52 and the semiconductor substrate 50 . However, the formation method of the silicon dioxide film 52 is not limited thereto, and the visible effect is formed by other methods, such as a thermal oxidation process.
[0020] Such as Figure 6 As show...
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