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MRAM memories utilizing magnetic write lines

A magnetic memory, magnetic wire technology, applied in static memory, read-only memory, information storage, etc., can solve the problem of electromigration not overcome, and achieve the effect of improving the reliability of resisting electromigration, improving efficiency, and being easy to manufacture.

Inactive Publication Date: 2006-02-22
APPLIED SPINE TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the other problems mentioned above, such as electromigration, are still not overcome

Method used

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  • MRAM memories utilizing magnetic write lines
  • MRAM memories utilizing magnetic write lines
  • MRAM memories utilizing magnetic write lines

Examples

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Embodiment Construction

[0030] The present invention relates to an improvement in a magnetic memory. The following description is presented to enable any person of ordinary skill in the art to make and use the invention, provided between the patent application and the context of its claims. Various modifications to the preferred embodiment will be apparent to those of ordinary skill in the art, and the general principles herein can be applied to other embodiments. Thus, there is no intention to limit the invention to the embodiments shown, but the intention is to accord the invention with the widest scope consistent with the principles and features described herein.

[0031] The present invention discloses a method and system for providing and using a magnetic random access memory. The method and system include providing a plurality of magnetic memory cells, a first plurality of write lines, and a second plurality of write lines. The first plurality of write lines is a plurality of magnetic write l...

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Abstract

A method and system for providing and using a magnetic random access memory are disclosed. The method and system include providing a plurality of magnetic memory cells, a first plurality of write lines, and a second plurality of write lines. The first plurality of write lines is a plurality of magnetic write lines. At least one of the plurality of magnetic lines and at least one of the second plurality of write lines each carrying a current for writing to at least one of the plurality of magnetic memory cells. Preferably, the plurality of magnetic write lines have soft magnetic properties and are preferably magnetic bit lines. For magnetic tunneling junction stacks within the magnetic memory cells, the magnetic bit lines are preferably significantly thicker than and closely spaced to the free layers of the magnetic memory cells.

Description

[0001] Cross-references to related applications [0002] This application claims priority under 35 USC 119(e) to Provisional Patent Application Serial No. 60 / 431,741, filed December 9, 2002. [0003] This application is related to pending US Patent Application Serial No. 60 / 444,881 (2817P), entitled "HIGH DENSITY AND HIGH PROGRAMMINGEFFICIENCY MARM DESIGN," filed February 5, 2003, and assigned to the assignee of the present application. This application is related to pending U.S. Patent Application No. ___(2818P), entitled "MRAM ARCHITECTURE AND A MAETHOD AND SYSTEM FOR FABRICATING MRAM MEMORIES UTILIZING THEARCHITECTURE," filed on ___ and assigned to the assignee of this application. This application is related to co-pending U.S. Patent Application Serial No. 2780P, entitled "MRAMARRAY WITH MAGNETIC WRITE LINES," filed on ___ and assigned to the assignee of this application. technical field [0004] The present invention relates to magnetic memory, and more particularly to a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C17/02
Inventor 臧大化
Owner APPLIED SPINE TECH
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