Environment-friendly type underground power cable
A power cable and environmentally friendly technology, applied in the field of environmentally friendly subway power cables, can solve the problems of a large amount of smoke, troublesome fire and rescue work, and the cable will inevitably not burn, and achieve low smoke density and small emission. Effect
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Embodiment 1
[0016] Embodiment 1: as figure 2 As shown, in the present embodiment, the present invention has conductor 1, inner semiconductive shielding layer 2, insulating layer 3, outer semiconductive shielding layer 4, metal shielding layer 5 from inside to outside successively, and metal shielding layer 5 has special outer protection Layer 12, the special outer sheath 12 includes a water-blocking layer 6, a high-density polyethylene sheath 7, an oxygen barrier layer 8, an armor layer 9, and a low-smoke and halogen-free sheath 10 from inside to outside.
Embodiment 2
[0017] Embodiment 2: as image 3 As shown, in this embodiment, the present invention has a conductor 1, an inner semiconductive shielding layer 2, an insulating layer 3, an outer semiconductive shielding layer 4, and a metal shielding layer 5 from the inside to the outside. The sheath 12, the special outer sheath 12 includes a water blocking layer 6, a low-smoke and halogen-free sheath 10, an oxygen barrier layer 8, an armor layer 9, and a high-density polyethylene sheath 7 from inside to outside.
Embodiment 3
[0018] Embodiment 3: as Figure 4 As shown, in the present embodiment, the present invention has conductor 1, inner semiconductive shielding layer 2, insulating layer 3, outer semiconductive shielding layer 4, metal shielding layer 5 from inside to outside successively, and metal shielding layer 5 has special outer protection Layer 12, the special outer sheath 12 includes a water-blocking layer 6, a high-density polyethylene sheath 7, an oxygen barrier layer 8, an armor layer 9, and a low-smoke and halogen-free sheath 10 from inside to outside. There is a semiconducting resistive water layer 11 between the metal shielding layer 5 and the outer semiconducting shielding layer 4 .
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