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Manufacturing method of potishing pad use polyurethane foam and polyurethane foam

一种制造方法、聚氨酯的技术，应用在半导体/固态器件制造、研磨机床、制造工具等方向

Inactive Publication Date: 2005-06-08
ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So, there will be disadvantages when using hollow balls to make polyurethane foam

Method used

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  • Manufacturing method of potishing pad use polyurethane foam and polyurethane foam
  • Manufacturing method of potishing pad use polyurethane foam and polyurethane foam
  • Manufacturing method of potishing pad use polyurethane foam and polyurethane foam

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] When Adipulin L-325 is 24.1kg, foaming agent SH-192 is 0.73kg (about 3 parts), and MBOCA is 6.32kg, a block with a specific gravity of 0.845 can be obtained. In addition, the Shore D hardness was 54 at this time.

Embodiment 2

[0054] When Adiprine L-325 is 21.4kg, SH-192 is 0.81kg (about 4 parts), and MBOCA is 5.6kg, a block with a specific gravity of 0.781 can be obtained. In addition, the Shore D hardness was 51 at this time.

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PUM

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Abstract

A production method comprising the step of charging prepolymer, a foaming agent and an active hydrogen-containing compound in specified amounts into a tank and foaming / mixing them for a specified time by a mixer, and the subsequent step of pouring the mixture liquid into a metal mold.

Description

technical field [0001] This invention relates to the manufacturing method of the polyurethane foam for polishing pads, and the polyurethane foam manufactured by this manufacturing method. Background technique [0002] A CMP (Chemical Mechanical Polishing) method is currently used as a polishing method for efficiently and accurately smoothing a wiring formation surface on a semiconductor substrate. This is a polishing method that combines chemical action and mechanical action, and can planarize the semiconductor substrate (wafer surface) in a relatively wide range. [0003] As the polishing pad used in this CMP method, there is a material formed of polyurethane foam in which fine depressions can be formed on the surface to retain the polishing slurry. [0004] As a known technique for producing such a polyurethane foam for polishing pads, there is a production method disclosed in JP-A-11-322877. The production method is to add and mix unfoamed heat-expandable tiny hollow sp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/00B24B37/24B24D13/14B24D18/00B29C44/34B29C44/36C08G18/00C08G18/08C08G18/10C08G101/00C08J5/14H01L21/304
CPCB24B37/24B24D18/00B24D18/0009B29C44/3442B29C44/36C08G18/10C08G2101/00C08G18/3814
Inventor 濑柳博井上薰
Owner ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC
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