GaN based LED upside down welding combination, and lamp and chip horizontally upside down welding technique

Abstract

The invention discloses a novel high-power semiconductor chip or device (including a GaN-based light-emitting diode) upside-down welding assembly and a lamp, as well as a low-cost wafer-level upside down welding manufacturing process. It belongs to the technical field of semiconductor optoelectronics. The invention includes: the epitaxial layer of the semiconductor chip or device is welded upside down to the substrate, the substrate wafer is peeled off, electrodes of a specific shape are deposited on the epitaxial layer, the semiconductor chip or device is cut into a combination of upside down welding, and a new type of lamp is designed so that Reduce total internal reflection. The advantages of the present invention are: (1) The manufacturing process is simple; (2) No need for expensive chip-level flip welding equipment; (3) High production efficiency; (4) Good heat dissipation efficiency; (5) Current distribution Uniform, the current density is increased; (6) the light extraction efficiency is improved; (7) the total internal reflection is removed.

Description

technical field [0001] The invention discloses a new type of high-power semiconductor chip or device (including GaN-based light-emitting diode (LED)) upside-down welding combination and a lamp, and a wafer-level upside-down welding process method for producing a new type of high-power semiconductor chip or device upside down welding combination. Background technique [0002] The chip-level flip welding process method, especially for high-power GaN-based light-emitting diodes (LEDs), has the following disadvantages: (1) the process method is complicated, the equipment is expensive, and the production efficiency is low. This is a low-cost mass production method. The bottleneck of high-power GaN-based light-emitting diodes; (2) due to the use of organic filling materials, the heat dissipation efficiency is not as expected; (3) the lattice mismatch between the substrate wafer and the epitaxial layer still exists; (4) the lining Total internal reflection between the base wafer an...

AI Technical Summary

Problems solved by technology

[0002] Chip-level upside-down welding process, especially for high-power GaN-based light-emitting diodes (LEDs), has the following disadvantages: (1) The process is complicated, the equipment is expensive, and the production efficiency is low. This is a low-cost mass production The bottleneck of high-power GaN-based light-emitting diodes; (2) due to the use of organic filling materials, the heat dissipation efficiency is not as expected; (3) the lattice mismatch between the substrate wafer and the epitaxial layer still exists; (4) the lining Inefficient light extraction due to total internal reflection between the bottom wafer and the epitaxial layer

GaN-based semiconductor light-emitting diodes can be epitaxially grown on GaN substrate wafers to avoid lattice mismatch, but GaN substrate wafers are very expensive

[0006] Total internal reflection greatly reduces light extraction efficiency

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