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Method for forming fine resist pattern

A patterning and photoresist technology, which is applied in the field of improving the method of preparing fine resist patterns, and can solve the problems of reducing the size of difficult resist patterns, obtaining resist patterns, and suppressing hole size differences, etc.

Inactive Publication Date: 2005-03-23
TOKYO OHKA KOGYO CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Even with this method, it is difficult to strictly suppress the size reduction of the resist pattern per unit temperature when heat flow is performed, and it is still difficult to obtain a resist pattern with a good cross-sectional shape, or to obtain a resist pattern with a good cross-sectional shape, or to form multiple layers on a single substrate. It is difficult to suppress the occurrence of hole size differences caused by heating errors when the perforated resist pattern is subjected to heat flow processing

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0069] By adding 75 parts by mass, the first polyhydroxystyrene with a weight-average molecular weight of 10000, a molecular weight dispersion of 1.2, and 39% of its hydroxyl hydrogen atoms replaced by 1-ethoxyethyl, and 25 parts by mass, a weight-average molecular weight It is 10000, the molecular weight dispersion is 1.2, and its 36% hydroxyl hydrogen atom is replaced by the second polyhydroxystyrene of tert-butoxycarbonyl, the two (cyclohexylsulfonyl) diazomethane of 5 mass parts, the 5 mass parts of 1,4-cyclohexyl dimethanol base divinyl ether, 0.2 mass parts of triethanolamine and 0.05 mass parts of fluorosiloxane-based surfactants are dissolved in 490 mass parts of propylene glycol monomethyl ether acetate, then A positive resist composition was prepared by filtering through a membrane filter having a pore diameter of 200 nm.

[0070] Then, the above-mentioned positive resist composition was applied to the surface of a silicon wafer (diameter 200 nm, thickness 0.72 mm) h...

Embodiment 2

[0074] A fine resist pattern was formed by processing in the same manner as in Example 1, except that the positive resist composition in Example 1 was used and 2 parts by mass of triphenylsulfonium trifluoromethanesulfonate as an acid generator was additionally mixed as a resist composition. Various properties in this case are shown in Table 1.

Embodiment 3

[0076] Prepare a positive resist composition in the same manner as in Example 1, except that only 100 parts by mass of the first polyhydroxystyrene is used instead of the second polyhydroxystyrene in Example 1, and the same method is used to form The resist pattern was then subjected to a heat flow process of heating first at 140°C for 90 seconds and then at 140°C for 90 seconds to obtain a fine resist pattern. The various properties in this case are listed in Table 1.

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Abstract

A method for forming a fine resist pattern wherein a patterned positive resist film provided on a substrate is reduced in size by a thermal flow treatment, characterized in that (I) the positive resist is a positive resist composition comprising (A) a resin compound which is increased in the solubility in an aqueous alkaline solution through reaction with an acid, (B) a compound generating an acid through irradiation with a radiation, (C) a compound having at least two vinyl ether moieties and reacting with the resin compound (A) by heating to form a crosslinking, and (D) an organic amine compound, and in that the thermal flow treatment is practiced in a manner wherein the heating treatment for the patterned resist is carried out at least two times in the range of 100 to 200ringC, and a treatment from the second on is carried out at a temperature not lower than that in the previous treatment. The method allows the reduction of the change of a resist pattern size per unit temperature, which leads to improved uniformity in a plane of resulting resist hole pattern sizes and the formation of a resist pattern being excellent in the shape of a cross-section.

Description

technical field [0001] The present invention relates to an improvement in a method for preparing a fine resist pattern by reducing the size of a fine resist pattern by using heat flow treatment, or more specifically, the present invention relates to an improved method which can reduce the size of a fine resist pattern by reducing the unit temperature The size of the resist pattern can be controlled with high precision by the heat flow treatment method of reducing the size of the resist pattern. Background technique [0002] In the manufacture of semiconductor devices such as integrated circuits (ICs) and large scale integrated circuits (LSIs), and liquid crystal devices such as liquid crystal displays (LCDs), in which photolithography is applied by using rays such as light, the pattern resolution of which depends on The wavelength of the radiation used and the numerical aperture (NA) of the projection optics. [0003] In recent years, with the improvement of the requirement...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004G03F7/027G03F7/039G03F7/40H01L21/027
CPCG03F7/0045G03F7/40G03F7/027H01L21/0273G03F7/0392G03F7/039
Inventor 新田和行嶋谷聪增岛正宏
Owner TOKYO OHKA KOGYO CO LTD
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