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Solid camera device, driving method thereof and camera

A technology of solid-state photography and motion, applied in the field of solid-state photography devices and cameras, can solve problems such as long-term and achieve the effect of not sacrificing sensitivity

Inactive Publication Date: 2004-07-07
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

On the other hand, it takes a relatively long time to read all the signals of a solid-state imaging device with many pixels, and it is impossible to output signals at the frame rate of a normal TV signal required for a monitor.

Method used

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  • Solid camera device, driving method thereof and camera
  • Solid camera device, driving method thereof and camera
  • Solid camera device, driving method thereof and camera

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0140] In Embodiment 1, a CCD (charge-coupled device) sensor of a progressive scanning method will be described as a solid-state imaging device.

[0141] figure 1 It is an explanatory diagram showing a configuration example of the CCD sensor 10 according to Embodiment 1 of the present invention. figure 1 The CCD sensor 10 has a pixel section 11, a horizontal transfer section 12, a charge detection section 13, a vertical transfer section ( figure 1 not shown) and the control unit 18. In addition, this CCD sensor 10 employs a simultaneous independent readout method for all pixels.

[0142] The pixel portion 11 has an effective pixel area 11A, a transient area 11B, a shadow area 11C, and vertical empty areas 11D and 11E. The effective pixel area 11A has 1280 (horizontal)×960 (vertical) photodiodes as photoelectric change elements arranged in a matrix. One photodiode constitutes one pixel. Here, the array of pixels in the horizontal direction is called a row, and the array...

Embodiment approach 2

[0216] In Embodiment 2, a CCD sensor of an interlaced scanning method will be described as a solid-state imaging device.

[0217] Figure 17 It is an explanatory diagram showing a configuration example of the CCD sensor 30 according to Embodiment 2 of the present invention. Figure 17 The CCD sensor 30 has a pixel portion 31, a horizontal transfer portion 32, a charge detection portion 33, a vertical transfer portion ( Figure 17 Not shown in ) and the control unit 38.

[0218] The pixel section 31 has an effective pixel area 31A, a momentary area 31B, a shadow area 31C, and vertical empty areas 31D and 31E. The effective pixel area 31A has 1280 (horizontal)×960 (vertical) photodiodes as photoelectric conversion elements arranged in a matrix. One photodiode constitutes one pixel. Each of the regions 31A to 31E of the pixel portion 31 and figure 1 Each of the regions 11A to 11E of the pixel unit 11 of the CCD sensor 10 has the same arrangement and the same number of pixel...

Embodiment approach 3

[0258] In Embodiment 3, a MOS (metal oxide semiconductor) sensor, particularly a CMOS (complementary MOS) sensor will be described as a solid-state imaging device.

[0259] Figure 27 It is a block diagram showing a configuration example of the CMOS sensor 50 according to Embodiment 3 of the present invention. Figure 27 The CMOS sensor 50 has a pixel address specifying circuit 312, a control section 314, a synchronization signal generator 316, a timing generator 318, a vertical register (row address selection section) 322, a latch array 324, a horizontal register (column address selection section) 326 , a sense amplifier 328 and a pixel unit 340 .

[0260] The pixel unit 340 has an empty area 342 , an effective pixel area 344 , a light and shadow area 346 , and an empty transfer area 348 . The effective pixel area 344 has 1280 (horizontal)×960 (vertical) photodiodes as photoelectric conversion elements arranged in a matrix. One photodiode constitutes one pixel.

[0261] F...

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Abstract

To read an image pickup signal at high speed without sacrificing a sensitivity and considerably damaging a resolution. The solid-state image pickup device is provided with a plurality of photoelectric transducers disposed in the shape of matrix, a plurality of vertical transfer parts each of which reads and vertically transfers an electric charge out of a photoelectric transducer belonging to a corresponding column, a horizontal transfer part for performing horizontal transfer, a charge detecting part for converting out a horizontally transferred charge into a signal voltage or the like, and a control part. The control part outputs a signal for either finding a signal corresponding to the sum of charges of the photoelectric transducers belonging to one column, belonging to rows selected at the interval of one row, belonging to one of columns adjacent to said column and belonging to rows except for the selected row, or finding a signal corresponding to the sum of charges of photoelectric transducers belonging to the same column for each of the predetermined even continuous rows of photoelectric transducers.

Description

technical field [0001] The present invention relates to a solid-state imaging device and a camera using the solid-state imaging device. Background technique [0002] Cameras using solid-state imaging devices such as CCDs (charge-coupled devices) (hereinafter, cameras refer to cameras using solid-state imaging devices) have increased demand for higher image quality and higher functionality, and multi-pixels have been achieved. Big progress. In addition, most recent cameras have a monitor such as a liquid crystal display for monitoring an object to be photographed. [0003] In order to reliably monitor a photographic subject, the frame rate cannot be made too small. In addition, liquid crystal televisions are often used as monitors, and in this case, the same signals as those of ordinary televisions must be provided. On the other hand, it takes a relatively long time to read all the signals of a solid-state imaging device having many pixels, and it is impossible to output s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04N3/15H04N9/04
CPCH04N3/155H04N9/045H04N25/42H04N25/441H04N25/46H04N25/73H04N25/76
Inventor 今村邦博藤井俊哉田代信一
Owner PANASONIC CORP
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