Semiconductor laser device

A laser device and semiconductor technology, which is applied to the structure of semiconductor lasers, lasers, and optical waveguide semiconductors, can solve problems such as increased resistance and reduced light output, and achieve the effects of reduced light absorption and improved slope efficiency

Inactive Publication Date: 2004-03-24
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, by lowering the carrier concentration of the p-type semiconductor region whose resistance tends to be higher than that of the n-type semiconductor region, the resistance tends to increase, and the light output decreases due to heat generation at high current. This is the so-called "roll-off" problem

Method used

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  • Semiconductor laser device
  • Semiconductor laser device
  • Semiconductor laser device

Examples

Experimental program
Comparison scheme
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Embodiment 1

[0035] FIG. 1 is a cross-sectional view of a semiconductor laser according to Embodiment 1 of the present invention.

[0036] In FIG. 1 , 10 denotes a semiconductor laser, and in the cross section of the semiconductor laser 10 in FIG. 1 , the direction perpendicular to the paper is the waveguide direction. 12 represents the p-InP substrate as the semiconductor substrate, and 14 represents the p-InP cladding layer as the first cladding layer arranged on the p-InP substrate 12, and the bandgap energy of this p-InP cladding layer 14 is 1.35eV, the layer thickness is 1000nm, and the carrier concentration is 1×10 18 cm -1 . 16 denotes an active region provided on the p-InP cladding layer 14 .

[0037] 18 represents the n-InP cladding layer as the second cladding layer provided on the active region 16. This n-InP cladding layer 18 is divided into two layers in this embodiment 1, and the n-InP cladding layer adjacent to the active region 16 The cladding layer 18a is composed of a...

Embodiment 2

[0085] Fig. 8 is a cross-sectional view of a semiconductor laser according to Embodiment 2 of the present invention.

[0086] In FIG. 8 , 40 denotes a semiconductor laser, and in the cross section of the semiconductor laser 40 in FIG. 8 , the direction perpendicular to the paper surface is the waveguide direction. 42 denotes a p-AlGaInAs cladding layer as a semiconductor layer.

[0087] Because semiconductor laser 40 adopts p-InP substrate 12, structure is roughly the same as semiconductor laser 10 of embodiment 1, but, be provided with its refractive index ratio n-InP cladding 18 in n-InP cladding 18 for semiconductor laser 10 High n-InGaAsP cladding layer 20, and in semiconductor laser 40, p-AlGaInAs cladding layer whose refractive index is lower than p-InP cladding layer 14 is inserted in p-InP cladding layer 14.

[0088] In the semiconductor laser 40, the p-AlGaInAs cladding layer 42 is interposed between the p-InP cladding layer 14d and the p-InP cladding layer 14c.

[...

Embodiment 3

[0109] Fig. 11 is a cross-sectional view of a semiconductor laser according to Embodiment 3 of the present invention.

[0110] In FIG. 11 , 50 denotes a semiconductor laser, and in the cross section of the semiconductor laser 50 in FIG. 11 , the direction perpendicular to the paper surface is the waveguide direction.

[0111] 52 represents an n-InP substrate as a semiconductor substrate, an n-InP cladding layer 18b is set on the n-InP substrate 52, an n-InGaAsP cladding layer 20 is set on the n-InP cladding layer 18b, and then - An n-InP cladding layer 18 a is provided on the InGaAsP cladding layer 20 . The n-InP cladding layer 18a and the n-InP cladding layer 18b constitute the n-InP cladding layer 18 as the first cladding layer.

[0112] Furthermore, the active region 16 is provided on the n-InP cladding layer 18a, and the p-InP cladding layer 14 as a second cladding layer is provided on the active region 16.

[0113] The ridge shape is formed by the p-InP cladding layer 1...

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Abstract

A semiconductor laser device according to the present invention comprises a p-InP cladding layer 14, an active region 16, an n-InP cladding layer 18a, an n-InP cladding layer 18b, and an n-InGaAsP cladding layer 20 with a thickness of between 0.05 mum and 0.3 mum sandwiched by the n-InP cladding layers 18a and 18b and laminated at a position closer to the active region 16 than a position at which an optical intensity of a near-field pattern of laser light emitted from the active region 16 becomes substantially zero. The semiconductor laser device exhibits small reduction in the optical output even when a large current flows, and has a high slope efficiency without changing the near-field pattern a great deal.

Description

technical field [0001] The present invention relates to a semiconductor laser device used for optical communication and the like, and in particular, to a semiconductor laser in which light intensity distribution is made asymmetric. Background technique [0002] With the spread of public communication networks using optical fibers, the transmission of large amounts of information at low cost is increasingly required. In response to such demands, in order to construct a public communication network at low cost and increase the amount of transmitted information, it is necessary to develop a semiconductor laser device that has good optical matching characteristics with the existing optical fiber network and has high light output efficiency. [0003] Figure 15 is a cross-sectional view of a conventional semiconductor laser. [0004] Figure 15 Among them, 200 represents a semiconductor laser, 202 represents a p-conductive type InP substrate (hereinafter, the p-conductive type i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/30H01S5/00H01S5/20H01S5/227H01S5/34H01S5/343
CPCH01S5/305H01S5/2004H01S5/20H01S5/34373H01S5/34306B82Y20/00H01S5/227H01S5/30
Inventor 中山毅
Owner MITSUBISHI ELECTRIC CORP
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