Device and method for mfg. GaN base

Abstract

The present invention discloses an apparatus and method for manufacturing a GaN substrate: by growing a GaN layer on the substrate in a chamber, and then separating the GaN layer from the substrate in the same chamber, preventing the The temperature drop causes microcracks or bending of the GaN substrate. The invention comprises: a chamber in which a substrate is loaded; a heating device for heating the chamber; a Ga carrier installed in the chamber for receiving a material capable of generating Ga molecules; a spray tube, It is used to inject gas capable of generating nitrogen molecules into the chamber, and the nitrogen molecule generating gas reacts chemically with the Ga molecule generating material to form a GaN layer on the substrate; and a transparent window hole is arranged on the periphery of the chamber, Used to irradiate the laser beam to the substrate.

Description

[0001] This application claims priority from Korean Application No. P2001-81877 filed on December 20, 2001, the contents of which are incorporated herein by reference. technical field [0002] The present invention relates to a device for manufacturing a light-emitting element substrate and a corresponding manufacturing method, more specifically, the present invention relates to a device for manufacturing a GaN (gallium nitride) substrate and a manufacturing method thereof. Background technique [0003] With the recent increasing demand for high-efficiency short-wave light-emitting devices, blue-violet short-wave light-emitting devices have become the focus of research. Specifically, diodes emitting blue light have a long luminous lifetime and are suitable for a wide range of application fields, such as multimedia, information communication, and the like. This blue-emitting diode can generate a short wave with a wavelength of about 450 nanometers, thereby improving the proce...

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Problems solved by technology

[0006] However, according to the prior art, the laser starting process in the GaN substrate manufacturing method is carried out at room temperature, and this process is performed after the GaN layer is grown at a high temperature of at least 1000° C., so that due to the sharp drop in temperature, the GaN Cracks will appear in the substrate, or the GaN substrate will bend

[0007] In addition, according to the prior art, the device for manufacturing the GaN substrate is divided into two chambers, one chamber is used to grow the GaN layer, and the other chamber is used to perform the laser starting process, so when GaN is grown on it When the sapphire substrate of the first layer is transferred between the two chambers, the sapphire substrate may break

Also, the temperature difference between the two chambers will crack or warp the GaN substrate

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