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Organic electroluminescent device and its prepn. method

An electroluminescent device and device technology, applied in the field of device preparation, can solve the problems of complex preparation process and inapplicability of small molecule OLED devices, etc., and achieve improved luminous efficiency and stability, low lighting voltage and good stability Effect

Inactive Publication Date: 2004-05-05
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These polymer buffer layers can significantly improve the stability of OLEDs, but due to the complexity of the preparation process, these methods are not suitable for the preparation of small molecule OLED devices

Method used

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  • Organic electroluminescent device and its prepn. method
  • Organic electroluminescent device and its prepn. method
  • Organic electroluminescent device and its prepn. method

Examples

Experimental program
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Effect test

Embodiment 1

[0034]The ITO glass with a sheet resistance of 70Ω was cleaned and dried by boiling detergent and ultrasonic deionized water, and the film thickness of ITO was 100nm. Put the cleaned ITO glass under a pressure of 1×10 -3 In the vacuum chamber of pa, a Teflon buffer film is evaporated on the ITO film by thermal evaporation method, the evaporation rate is 0.04nm / s, and the film thickness is 2nm. On the Teflon buffer film, continue to vapor-deposit the hole transport layer NPB, the vapor deposition rate is 0.4nm / s, and the film thickness is 40nm. Continue to vapor-deposit organic functional layer Zn(Ac) on the NPB layer 2 , the evaporation rate is 0.2nm / s, and the film thickness is 60nm. In Zn(Ac) 2 The metal layer is continuously vapor-deposited on the layer, and the metal layer is sequentially composed of Mg-Ag alloy and Ag. The total evaporation rate of Mg-Ag is 1.5nm / s, and the ratio of Mg and Ag evaporation rates is 4:1. The film thickness is 100nm; the evaporation rate ...

Embodiment 2

[0036] The ITO glass with a square resistance of 60 Ω was cleaned and dried by boiling detergent and ultrasonic deionized water, and the film thickness of ITO was 180 nm. Put the cleaned ITO glass under a pressure of 1×10 -4 In the vacuum chamber of pa, a Teflon buffer film was evaporated on the ITO film by thermal evaporation method, the evaporation rate was 0.02nm / s, and the film thickness was 1nm. The hole transport layer TPD is continuously evaporated on the Teflon buffer film, the evaporation rate is 0.2nm / s, and the film thickness is 40nm. Continue to vapor-deposit the organic functional layer Alq on the TPD layer 3 , the evaporation rate is 0.1nm / s, and the film thickness is 60nm. in Alq 3 The metal layer is continuously evaporated on the layer, and the metal layer is composed of Ca and Ag in turn. The evaporation rates of Ca and Ag are 0.6nm / s and 0.3nm / s respectively, and the film thicknesses are 35nm and 130nm respectively. The lighting voltage of the device is 2...

Embodiment 3

[0038] The ITO glass with a sheet resistance of 30Ω was cleaned and dried by boiling detergent and ultrasonic deionized water, and the film thickness of ITO was 240nm. Put the cleaned ITO glass under a pressure of 1×10 -5 In the vacuum chamber of pa, a Teflon buffer film is evaporated on the ITO film by thermal evaporation method, the evaporation rate is 0.01nm / s, and the film thickness is 6nm. On the Teflon buffer film, the hole transport layer MTDATA was continuously evaporated, the evaporation rate was 0.2nm / s, and the film thickness was 40nm. Continue to vapor-deposit organic functional layer Zn(Ac) on top of MTDATA layer 2 , the evaporation rate is 0.2nm / s, and the film thickness is 40nm. In Zn(Ac) 2 The metal layer is continuously evaporated on the layer, and the metal layer is composed of Ca and Ag in turn. The evaporation rates of Ca and Ag are 0.8nm / s and 0.2nm / s respectively, and the film thicknesses are 25nm and 150nm respectively. The lighting voltage of the de...

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Abstract

The invention discloses an organic electro-luminescence device and its preparation. The device includes first and second electrode layers, positive hole transport layer between said two electrode layers, luminescence layer being able to transfer electron and buffer layer between first electrode and positive hole transport layer. The buffer layer is made by using heat evaporation plating method to coat film of organic material on first electrode and the organic material is Teflon. The film on buffer layer possesses structure with nanometer size. The invention provides high efficiency for injection of positive hole and increases luminescence efficiency and stability.

Description

technical field [0001] The invention relates to an organic electroluminescence device, more specifically, the invention relates to an organic electroluminescence device with high luminous efficiency and good stability, and also relates to a preparation method of the device. Background technique [0002] In 1987, C.W.TANG et al. (C.W.Tang, S.A.Slyke, Appl.Phys.Lett.5l, 913 (1987)) of Kodak Company in the United States adopted a double-layer structure for the first time, using aromatic diamine derivatives as hole transport materials. An organic small molecule material with high fluorescence efficiency and a uniform and dense high-quality film that can be made into a uniform and dense high-quality film by a vacuum coating method—tris(8-hydroxyquinoline)aluminum (hereinafter referred to as Alq 3 ) as a material for the light-emitting layer to prepare higher quantum efficiency (1%), high luminous efficiency (>1.5lm / W), high brightness (>1000cd / m 2 ) and low driving voltage...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H05B33/00H05B33/10H05B33/12H05B33/14H05B33/26
Inventor 王立铎高裕弟邱勇张德强
Owner TSINGHUA UNIV
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