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Sensitive amplifier, memory and control method

A technology for sensitive amplifiers and control terminals, which is applied in the field of memory and control, and sensitive amplifiers. It can solve problems that affect the performance of semiconductor memory, abnormalities, and wrong results, so as to improve the accuracy of data reading and writing, reduce device delays, and reduce power consumption. The effect of loss

Pending Publication Date: 2022-08-05
CHANGXIN MEMORY TECH INC
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the sensitive amplifier performs the amplification operation, due to the difference in the device process parameters, there may be abnormalities, resulting in wrong output results after amplification, which seriously affects the performance of the semiconductor memory.

Method used

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  • Sensitive amplifier, memory and control method
  • Sensitive amplifier, memory and control method
  • Sensitive amplifier, memory and control method

Examples

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Embodiment Construction

[0093] Exemplary embodiments will be described in detail herein, examples of which are illustrated in the accompanying drawings. Where the following description refers to the drawings, the same numerals in different drawings refer to the same or similar elements unless otherwise indicated. The implementations described in the illustrative examples below are not intended to represent all implementations consistent with this application. Rather, they are merely examples of apparatus and methods consistent with some aspects of the present application as recited in the appended claims.

[0094] like figure 1 As shown, a sense amplifier includes a first P-type transistor P1, a second P-type transistor P2, a first N-type transistor N1 and a second N-type transistor N2.

[0095] The first P-type transistor P1, the second P-type transistor P2, the first N-type transistor N1 and the second N-type transistor N2 form a cross-coupling circuit. That is, the gate of the first P-type tran...

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Abstract

The invention provides a sensitive amplifier, a memory and a control method, and the sensitive amplifier comprises a control module which is provided with an input end and an output end, and is used for carrying out pulse width adjustment on a first driving control signal received by the input end according to process corner information of a transistor, and generating and outputting a first driving control adjustment signal; the first control end of the amplification module is connected with the output end of the control module, and the amplification module is used for responding to the first driving control adjusting signal to be communicated with the first driving power supply and amplifying the voltage difference between the bit line and the complementary bit line under the driving of the first driving power supply, so that the voltage difference with proper size is formed on the bit line and the complementary bit line; compared with an overlarge or undersmall voltage difference formed on the bit line and the complementary bit line, the voltage difference between the bit line and the complementary bit line is driven to reach the target voltage difference value, the sensing accuracy of the sensitive amplifier can be improved, the data read-write accuracy is improved, and the power loss of the sensitive amplifier can be reduced.

Description

technical field [0001] The present application relates to the field of integrated circuit testing, and more particularly, to a sense amplifier, a memory and a control method. Background technique [0002] With the popularization of electronic devices such as mobile phones, tablets, and personal computers, semiconductor memory technology has also developed rapidly. [0003] The sense amplifier (SenseAmplifier: SA for short) is an important part of the semiconductor memory, and its main function is to amplify the small signal on the bit line, and then perform data read and write operations. However, when the sense amplifier performs the amplifying operation, due to different process parameters of the device, an abnormality may occur, resulting in an error in the amplified output result, which seriously affects the performance of the semiconductor memory. SUMMARY OF THE INVENTION [0004] An embodiment of the present application provides a sense amplifier, including: [000...

Claims

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Application Information

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IPC IPC(8): G11C7/06G11C7/08G11C7/12
CPCG11C7/062G11C7/08G11C7/12
Inventor 杨宇
Owner CHANGXIN MEMORY TECH INC
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